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Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC Hideharu Matsuura1,a *, Akinobu Takeshita1, Tatsuya Imamura1, Kota Takano1, Kazuya Okuda1, Atsuki Hidaka1, Shiyang Ji2, Kazuma Eto2, Kazutoshi Kojima2, Tomohisa Kato2, Sadafumi Yoshida2 and Hajime Okumura2 1Department of Electrical and Electronic Engineering, Osaka Electro-Communication University, Neyagawa, Osaka 572-8530, Japan 2Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan amatsuura@osakac.ac.jp Keywords: Temperature-dependent resistivity, p-type 4H-SiC, Codoped 4H-SiC, Heavily doped 4H-SiC, Al-doped 4H-SiC, Al- and N-codoped 4H-SiC Abstract: The conduction mechanisms in heavily Al-doped and heavily Al- and N-codoped p-type 4H-SiC epilayers were investigated.
Forum 778-780 (2014) 135-138
Forum 740-742 (2013) 181-184
Forum 457-460 (2004) 685-688
Forum 556-557 (2007) 367-370

Nikitina 1 1 School of Electrical, Electronic and Computer Engineering, Merz Court, University of Newcastle, Newcastle, NE1 7RU, U.K.
Despite the recent advances in the quality of oxide layers on SiC, the mobility of inversion layers is still low and this will affect the maximum frequency of the operation for these devices.
Despite recent advances in the fabrication of the silicon carbide / silicon dioxide interface [1] and the introduction of high κ dielectric structures [2], the mobility under the gate dielectric is always low and this is mainly due to the influence of interface states [3] at the SiC/SiO2 interface.
Perez-Tomas, et al.: Materials Science Forum, Vols. 483 - 485, (2005), p. 713 [3] E.
Takahashi, et al.: Materials Science Forum, Vols. 457 - 460, (2004), p. 743 [6] A.

Roberto Frias, s/n 4200-465 Porto Portugal Tel: +351 225081716 Fax: +351 225081584 E-mail: ffonseca@fe.up.pt Webpage: www.fe.up.pt/materiais2007 MATERIAIS 2007 sponsors:MATERIALS and THE CITY exhibition supporters: MATERIAIS 2007 supporters: Júlio L. de FigueiredoForeword This special issue of Materials Science Forum is dedicated to a selection of papers presented at MATERIAIS 2007 - 13th Conference of Sociedade Portuguesa de Materiais, IV International Materials Conference Symposium - A Materials Science Forum: "Global Materials for the XXI Century: Challenges to Academia and Industry".
From the 600 papers presented at the Conference, 450 remained for the review procedure according to Materials Science Forum rules and 200 were finally selected for publication.
The number of papers per chapter is as follows: Chapter 1 - Biomaterials (19 papers) Chapter 2 - Ceramics (16 papers) Chapter 3 - Composite Materials (15 papers) Chapter 4 - Electronic, Magnetic and Photonic Materials (20 papers) Chapter 5 - Metals and Alloys (17 papers) Chapter 6 - Nano and Microstructural Materials (12 papers) Chapter 7 - Polymers (17 papers) Chapter 8 - Paper, Textiles, Wood and Cork (7 papers) Chapter 9 - Smart Materials (6 papers) Chapter 10 - Advances in Materials Characterization (7 papers) Chapter 11 - Materials and Processing Modelling (9 papers) Chapter 12 - Recycling (10 papers) Chapter 13 - Surfaces, Interfaces and Membranes (12 papers) Chapter 14 - Materials for Civil Engineering Applications (12 papers) Chapter 15 - Materials for Energy Production, Transport, Storage and Mechanical Engineering Applications (14 papers) Chapter 16 - Foresight, Materials and Art, Generic (7 papers)This Special Issue

Solvent Design for High-Purity SiC Solution Growth Shunta Harada1,2, a*, Goki Hatasa2, b, Kenta Murayama1, c, Tomohisa Kato3, d, Miho Tagawa1,2, e, Toru Ujihara1,2, f 1Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan 2Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan 3Advanced Power Electronics Research Center (APERC), National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan aharada@numse.nagoya-u.ac.jp, bhatasa.gouki@f.mbox.nagoya-u.ac.jp, cmura_mura@sic.numse.nagoya-u.ac.jp, dt-kato@aist.go.jp, emtagawa@numse.nagoya-u.ac.jp, fujihara@nagoya-u.jp, Keywords: SiC, top-seeded solution growth, impurity, CALPHAD, yttrium Abstract.
Forum, 740-742 (2013) 189
Forum, 457-460 (2004) 123
Forum, 645-648 (2010) 13
Forum 740-742 (2013) 73.

Forum Vol. 84(2006), p. 431 [2] B.
Engineering Structures.
Forum Vol. 15(2009), p. 61-64 [4] Xueying Wei, Hong Hao.
International Journal of Impact Engineering.
Forum Vol. 36(2009), p. 522-536

Callister, Jr., Materials science and engineering: An introduction, 7th ed., John Wiley & Sons, Inc., New York, 2007
Kaasschieter, On the risk of cracking in clay drying, Chemical Engineering Journal. 86 (2002) 133-138
Forum. 312-315 (2011) 971-976
Forum. 353 (2014) 116-120
Drying and Energy Technologies, Series: Advanced Structured Materials. 63ed, Springer-Verlag, Heidelberg (Germany), 2015, v. 63, pp. 43-70.

Materials Science Forum Vols. *** (2004) pp.374-379 online at http://scientific.net  2004 Trans Tech Publications, Switzerland Surface Quality Analysis of Milling Hardened Die Steel with Micro-end Mill Y.N.
Qin 1,d 1Institute of Manufacturing Technology, Guangdong University of Technology, 510090 Guangzhou, PR China 2 College of Mechanical Engineering, Guangxi University, 530004 Nanning, PR China a hyn@gxu.edu.cn, bcywang@gdut.edu.cn , cgoldlong79@163.com, dqinzhe@163.net Keywords: Micro-end mill, Hardened steel, Surface quality Abstract.
When fz Advances in Materials Manufacturing Science and Technology 376 ≥0.016mm/tooth, Ra values increase with feed per tooth.
The machining system being in stable state in this experiment Advances in Materials Manufacturing Science and Technology 378 indicates that it is feasible to increase cutting speed in mid-high speed milling, but the sympathetic vibration will occur under a certain critical speed.
Ad = 0.10mm Ad = 0.30mm (a) Vibration power spectrum Ad = 0.10mm Ad = 0.20mm Ad = 0.30mm (b) SEM micrographs of chip top Materials Science Forum Vols. *** 379 3.

Analysis of Kinematics and Dynamics of Crank-Rocker Mechanism Hui Wang 1, a,Rongrong Zhang 1,b,Shengliang Xiao 1,c,Peter Leisner2,d 1 Mechanical School, Changzhou University, Changzhou, China 2 Engineering School, Jönköping University, Jönköping, Sweden aemail: wanghui@cczu.edu.cn, bemail:904954331@qq.com, cemail:515721736@qq.com, d email:Peter.Leisner@sp.se Keywords: java; crank-rocker mechanism; kinematics; dynamics Abstract.
In light of the above problems, the dissertation adopts Java advanced programming language and makes programs on the basis of theoretical analysis.
Xi’an: Northwest A&F University, 2006 (In Chinese) [2] Changgao Xia, Lingyun Wang: Tractor & Farm Transporter Forum Vol.5 (2004), p. 29-32.
(In Chinese) [3] Peng Li, Baocheng Zhang, Kaimin Zhao: Mechanical and Electrical Technology, Forum Vol.3 (2011), p.103-105.
(In Chinese) [4] Peng Li, Baocheng Zhang, Kaimin Zhao: Mechanical and Electrical Technology, Forum Vol.3 (2011), p.103-105.

Janzén: Materials Science Forum Vols. 338-342, (2000), p. 237
Muller: Materials Science & Engineering, B: Solid-State Materials for Advanced Technology Vols.
Duffar: Materials Science Forum Vols. 338342, (2000), p. 119
Winnacker: Materials Science Forum Vols. 338-342, (2000), p. 107

., 48 Wadai, Tsukuba, Ibaraki 300-4247 Japan 3Department of Materials Science & Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 Japan 4Department of Applied Chemistry, Tohoku University, 6-6-07, Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 Japan 5National Institute of Advanced Industrial Science and Technology (AIST), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569 Japan akuniharu-fujii@hitachi-chem.co.jp, bk-takei@hitachi-chem.co.jp, cm-aoshima@hitachi-chem.co.jp, dn-senguttu@hitachi-chem.co.jp, em-hiratani@hitachi-chem.co.jp, fujihara@numse.nagoya-u.ac.jp, gmatsumoto@atomol.che.tohoku.ac.jp, ht-kato@aist.go.jp, ih-kurashige@hitachi-chem.co.jp, jh-okumura@aist.go.jp Keywords: SiC, Crystal Growth, Solution Flow, Temperature Distribution, Morphology Abstract The influences of solution flow and lateral temperature distribution on the surface morphology of 4H-SiC single crystal grown from solution was investigated.
Arai, Materials Science Forum, 645 – 648, (2010), p.655 [4] R.
Harada, Materials Science Forum, 717-720, (2012), p.351
Ujihara, Materials Science Forum, 778-780, (2014), p.67