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Boron-doped nanocrystalline silicon thin films prepared by PECVD Xiu-Qin Wang, Jian-ning Ding*, Ning-Yi Yuan*, Shu-Bo Wang Center for low-dimensional materials, micro-nano devices and system, Changzhou University, Changzhou 213164, China Jiangsu Key Laboratory for Solar Cell Materials and Technology, Changzhou 213164, China Email: nyyuan@cczu.edu.cn Keywords: PECVD, boron-doped, nanocrystalline silicon, crystalline fraction, conductivity.
Several techniques such as plasma enhanced chemical vapor deposition (PECVD), evaporation, reactive evaporation, sputtering, laser ablation, and size selected cluster depositon have been used to deposit nanocrystalline materials of interest.
However, PECVD technique has the advantage that not only it provides the possibility to tailor-made the properties of the nanocrystalline materials but also offers the opportunity to encapsulate the nanostructured objects in the matrix of the desired materials[4].
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Experimental The sample materials and fabricating process are shown in Table 1 and 2.
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Actually, micro-capacitive accelerometer, which produced by silicon materials, is often used in high temperature environment.
The general materials interpolation model are: homogenization method, variable density method and variable thickness method, etc[4].
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When the comb micro-capacitive accelerometer works from room temperature to higher temperature environment, thermal expansion of materials produce heat load, and the heat load leads to structure deformation and displacement.
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After testing the surfaces there was analyzed the composition of the sand from a quantity and geometrical point of view; after that there was measured the displaced material with a roughness meter.
The material was placed under particle jet.
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Materials and Methods 2.1 Experimental site The experiments were conduct at a greenhouse in the experimental field of Jingjiang (120.26, 32.03), Jiangsu, China.
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Venugopal Rao, Journal of Non-Crystalline Solids,Volume 482, ( 2018), 160-169 [2] C.
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In order to simplify the analysis, we assume thermoelectric materials physical parameters (Seebeck coefficient, resistivity and thermal conductivity, etc.) as constant, ignore the Thomson hot; the assumption that control and non-control side exist uniform temperature and heat flux. 2.
In order to reduce Rs, using the TES series thermoelectric refrigeration device, thin ceramic panel and good thermal conduction materials used in radiator, considering much lower ceramic panel heating resistance than TEC series, Ru will be lower.
Acknowledgment This work was financially supported by the Graduate Innovation Base of Jiangxi Province, for Instrument Science and Technology.
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