Boron-Doped Nanocrystalline Silicon Thin Films Prepared by PECVD

Xiu Qin Wang; Jian Ning Ding; Ning Yi Yuan; Shu Bo Wang

doi:10.4028/www.scientific.net/KEM.503.386

Paper Titles

Numerical Simulation of Multi-Physical Fields Coupling and Design of a Digital Microfluidics Chip
p.359

Design and Simulation of Micro-Power Generator Based on Piezoelectric Effect for MEMS Devices Applications
p.369

Structures and Dielectric Properties of (Pb, La)(Zr, Ti)O₃ Antiferroelectric Thick Films Prepared by Different Sintering Procedures
p.375

Accuracy Correction of the Measuring Method for Film Stress Gradient Based on Curvature Radius
p.381

Boron-Doped Nanocrystalline Silicon Thin Films Prepared by PECVD
p.386

Design and Realization of Modular MEMS-Based Attitude Measurement and Control System Based Wireless Sensor Networks
p.393

Effects of Different Package Structures on Thermal Properties of High Power White LED
p.397

Design of Ethernet Interface Based on FPGA and W5300
p.402

Size-Dependence on Load Properties of a Silicon Nanobeam
p.406

HomeKey Engineering MaterialsKey Engineering Materials Vol. 503Boron-Doped Nanocrystalline Silicon Thin Films...

Boron-Doped Nanocrystalline Silicon Thin Films Prepared by PECVD

Abstract:

Boron-doped nanocrystalline silicon thin films(p-nc-Si:H) were deposited on glass substrates by plasma enhanced chemical vapour deposition (PECVD) using SiH₄ / H₂ / B₂H₆. The effects of substrate temperature, rf power and diborane flow on the microstructure, the electrical properties of nanocrystalline silicon thin films have been investigated. The results show that, increasing substrate temperature, rf power and B₂H₆ flow can improve the conductivity of P-Si thin film. However, exceeding one value, they are not advantageous to improve the conductivity due to the decrystallization of films. Hence, appropriate process conditions are crucial for the preparation of high quality p layer. crystalline volume fraction (Xc) 26.2 %, mean grain size (d) 3.5nm and conductivity 0.374S/cm, p-nc-Si:H thin film was deposited.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 503)

Pages:

386-390

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.503.386

Citation:

Cite this paper

Online since:

February 2012

Authors:

Xiu Qin Wang, Jian Ning Ding, Ning Yi Yuan, Shu Bo Wang

Keywords:

Boron-Doped , Conductivity, Crystalline Fraction, Nanocrystalline Silicon, PECVD

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J.K. Rath and R.E.I. Schropp: Solar Energy Materials and Solar Cells, Vol. 53 (1998), p.189.

Google Scholar

[2] R.Saleh ,and N.H. Nickel: Thin Solid Films, Vol. 427 (2003), p.266

Google Scholar

[3] O.Vetterl, M.Hülsbeck, J. Wolff, R. Carius and F. Finger: Thin Solid Films, Vol. 427(2003), pp.46-50.

DOI: 10.1016/s0040-6090(02)01237-3

Google Scholar

[4] U. Coscia, G. Ambrosone,nd D. K. Basa: J. Appl. Phys, Vol. 103 (2008), p.063507

Google Scholar

[5] G. Yue, J. D. Lorentzen, J. Lin,D. Han, Q. Wang: Appl.Phys. Lett. Vol.75(1999), p.492

Google Scholar

[6] E. Bustarret, M. A. Hachicha, M. Brunel: Appl. Phys. Lett. Vol. 52 (1988), p.1675.

Google Scholar

[7] Yang Shi-E , Wen Li-Wei , Chen Yong-Sheng: ACTA PHYSICA SINICA, Vol. 57 (2008), p.5176

Google Scholar

[8] Michio Kondo, Makoto Fukawa, Lihui Guo, Akihisa Matsuda : Journal of Non-Crystalline Solids, Vol. 266-269(2009), p.84

Google Scholar

[9] Winer. K, Street.R. A, Johnson. N. M, Walker.J: Physical Review B (Condensed Matter), Vol. 42(1990), p.3120

Google Scholar