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Experimental materials and methods Mg-8.9wt%Al-0.53wt%Zn alloy ingots were adopted as the materials for experiment.
By comparing C with Cmax, the risk of material failure during processing is assessed.
According to the dynamic material model, D equals to covariate J.
Acknowledgements The present research is supported by the National Natural Science Foundation of China (Grant No. 50735005, No.50605059), Natural Science Foundation for Young Scientists of Shanxi Province, China (Grant No.2007021026), and Natural Science Foundation of North University of China.
References [1] R.Sowerby and N.Chandrasekaran: Materials Science and Engineering Vol.79 (1986), p.27 [2] C.Dorum, O.S.Hopperstad, T.Bersliad: Engineering Fracture Mechanics Vol.76 (2009), p.2232 [3] D.C.Ko, B.Y .Kim, J.C.Choi: Journal of Materials Processing Technology Vol.62 (1996), p.166 [4] M.Pereira, G.Rubim O.Acselrad: Journal of Materials Processing Technology Vol.203 (2008), p.13 [5] Y.V.R.K.Prasad: Indian Journal of Technology Vol.28 (1990), p.435 [6] Y.V.R.K.Prasad, T.Seshacharyulu: International Materials Reviews Vol.43 (1998), p.243 [7] H.L.Gegel: Computer Simulation in Materials Science.OH: ASM 1986, p.91 [8] Y.Kojima, T.Aizawa, K.Higashi, S.Kamado: Materials Science Forum Vol.419 -422(2003), p.249 [9] S.I.Oh, C.C.Chen, S.Kobayashi S: Journal of Engineering for Industry, Transaction of the ASME Vol.101 (1979), p.23 [10] A.G.Atkins: Metal Science Vol. 15(1981), p.81 [11] V.Vujovic and A.H.Shabaik: Journal of Engineering materials and Technology, Transactions of the

Research on Electron Mobility Model for Tensile Strained-Si(101) with Properties of Semiconducting Materials Meng Nan1,a,Huiyong Hu2,b,Heming Zhang3,c，Xujia Shi4,d, Rongxi Xuan5,e,Wang bin6,f Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University, Xi’an, 710071, Peoples R China a13468710011@163.com,bhuhy@xidian.edu.cn,chmzhang@xidian.edu.cn,dshixujia2007@163.com, exxx6688518@163.com,fwbin0316@126.com Keywords: Tensile Strain; Electron; Mobility Abstract.
K5051225014 and K5051225004) and Natural Science Basic Research Plan in Shaanxi Province of China (No.2010JQ8008).
Microelectron Eng, 2009, 86(3): 218 [5] Hu,Huiyong ; Zhang, Heming ; Dai, Xianying Chinese Journal of Semiconductors v 26, n 4, p 641-644, April 2005 [6] J.J.
[14] Song JianJun, Yang Chao, Zhang HeMing, Hu HuiYong, Zhou CHunYu & Wang Bin, Science in China, Physics Mechanics and Astronomy.
Vol. 55 (2012) , p .2033 [15] Song JianJun, Zhang HeMing, Hu HuiYong and Fu Qiang, Science in China, Series G: Physics, Mechanics and Astronomy.

All the tested materials can be considered as a vapor permeable materials, which is positive from the point of view of their hygric performance in building envelopes.
Therefore, the commonly produced AAC materials have better properties than the material presented in this paper.
Acknowledgement: This research has been supported by the Czech Science Foundation, under Project No.
Interlaboratory comparison of hygric properties of porous building materials.
Journal of Thermal Envelope and Building Science 27 (2004) 307–25

In Chinese [3] HUANG Jiwu, YIN Zhimin, FANG Jiafang, NIE Bo, WANG Tao: Materials Science, Vol. 546-549(2007), p. 867-870.
Zettler,J.F. dos Santos,V.Sivan: Materials Science and Engineering, Vol. 392(2005), p. 292-300
Papadimitriou: Materials and Design, Vol. 28(2007), p. 831-836
[9] J.Cwiek: Journal of Materials Processing Technology, Vol. 164-165(2005), p. 1007-1013
Zettler, J.F. dos Santos: Materials Science and Engineering, Vol.460-461 (2007), p. 243-250.

Materials and preparation test Ordinary Portland cement accordance with Type 1 of ASTM C150 was used as a binder in 10% by weight to mix on soil mortar.
In order to modify materials, the soil particles were then processed by using a crusher.
Conclusions The effects of various particles soil on cement-soil materials reported in the terms of dry compressive strength and water absorption.
[3] Bahar, R., Benazzoug, M. and Kenai, S., Experimental analysis of the effect of some compaction methods on mechanical properties and durability of cement stabilized soil, Journal of Materials Science 41(2006), pp. 6956–6964
[13] Walker, P., Strength and Erosion Characteristics of Earth Blocks and Earth Block Masonry, Journal of Materials in Civil Engineering, Vol 16, (5) (2004), ASCE, pp. 497-506

One interesting semiconductor materials for thermoelectric materials are investigated as ZnO material because it can be p-type or n-type depending on the material impurities (dopants).
Material Science, 2012. 32: p. 347-355
[11] Fergus, J.W., Oxide materials for high-temperature thermoelectric energy conversion.
Journal of Materials Science Research, 2015. 4(3): p. 40
Materials Science in Semiconductor Processing, 2014. 27: p. 19-25

Comparison of results between the different materials plates.
Biomedical applications of polymer-composite materials.
Journal of Biomechanics, 3229-3235
Journal Biomech Engineering, 273-280
Composites Science Technology, 55-65

Ceramic goods are made from natural materials that include a high quantity of earth materials like clay and molding into any form, then dehydration phase where they are exposed to temperatures ranging from 1200°C to 1290°C [18].
Construction and Building Materials [Internet].
Materials and Structures [Internet].
Construction and Building Materials [Internet].
International Journal of Engineering Science and Technology. 2011 Jul; 3(7): 5436-40

In Journal of Electronic Materials, Vol. 23, No. 8, 1994, pp. 701-707 [2] SHU, M.H., HSU, B.M., HU, M.C.
In Materials Science and Engineering B55, 1998, pp. 5-13
In Journal of Materials Science Letters, Vol. 19, Is. 14, 2000, pp. 1241-1242
In Materials Science and Engineering B25, 1994, pp. 39-46
In Materials Science and Engineering, roč. 44, č. 1, 1-44 s., 2004.

Materials which have magnetoelectric effect are called magnetoelectric materials.
Journal of Chongqing University of Posts and Telecommunications: Natural Science Edition,2005,17(1):85-87
New electronic film materials[M].
Materials Review, 2008,22(8):16-20
Electronic Materials[M].