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Andreyuk and G.G Tyulenev, and the engineering strain values for implementation in the Abaqus CAE environment has been performed according to the following method: (3) (4) (5) The deformation resistance in the Abaqus CAE environment has been given depending on: the engineering strain (ε) in the range of 0.0-0.8; strain rate (u) in the range of 0.0-40.0 s-1; deformation temperature (t) in the range of 800-1200 °C.
The values of deformation resistance and the engineering strain have been processed by formulas (3) and (5).
Zhytnikov, Computerized simulation of shortened ingots with a controlled crystallization for manufacturing of high-quality forgings, International Journal of Advanced Manufacturing Technology, 103(5-8) (2019) 3057-3065
Gorovoy, New sulphiding method for steel and cast iron parts, IOP Conference Series: Materials Science and Engineering, 233 (2017) 012049
Wang, Effect of thermomechanical processing on the microstructure and mechanical properties of low carbon steel, Proc. of the 5th International conference on advanced design and manufacturing engineering (ICADME 2015), Advances in Engineering Research, Shenzhen, China, (2015) 1984-1989

Callister, Jr., Materials science and engineering: An introduction, 7th ed., John Wiley & Sons, Inc., New York, 2007
Kaasschieter, On the risk of cracking in clay drying, Chemical Engineering Journal. 86 (2002) 133-138
Forum. 312-315 (2011) 971-976
Forum. 353 (2014) 116-120
Drying and Energy Technologies, Series: Advanced Structured Materials. 63ed, Springer-Verlag, Heidelberg (Germany), 2015, v. 63, pp. 43-70.

Effect of Frequency on Composition and Microstructure of Siliconized Layer Using Pulse Electrodeposition Haili Yang 1,2,a, Pingju Hao 1,b, Guozhang Tang 1,c and Yungang Li 1,d 1Hebei Key Laboratory of Modern Metallurgy Technology, College of Metallurgy and Energy, Hebei Polytechnic University, Hebei Polytechnic University, Tangshan, 063009, China 2College of Mechanical Engineering, Yanshan University, Qinhuangdao, 066004, China asjmsxmhl@126.com, bhaopingju@163.com, ctgz@heut.edu.cn, dlyg@heut.edu.cn Keywords: Frequency; Siliconized Layer; Composition; Microstructure Abstract.
Introduction The siliconized layer has attracted attention in the field of engineering because such structure has a considerable number of practical applications and fundamentally interesting properties [1,2].
Forum Vol. 83-87 (1992), p. 119 [3] A.
Zhang: Advanced Materials Research Vol.129-131 (2010), p. 1201 [9] Y.
Jia: Defect and Diffusion Forum Vol. 295/296 (2009), p. 33

Engineering practice found that after rectangular box part trimming, straight edge portion would vary different degrees of deflection, resulting in product quality standards.
[2] Chen Lei: Effect of Material Parameters Wave on Sheet Metal Springback Using Orthogonal Design Simulation, Advanced Materials Research.
Forum Vol. 314-316 (2011) , p. 585
[3] Hu Kan, Zhang Hailing: A Springback Reduction Method for Sheet Metal Bending, Electric Engineering and Computer.
Forum Vol. 19-22 (2011), p. 617

A Survey of Collision Detection Ranran Man ,Dongsheng Zhou and Qiang Zhang* Key Laboratory of Advanced Design and Intelligent Computing,Dalian university,Dalian economic technological development zone, Liaoning, China, 116622 *Corresponding author: zhangq26@126.com Key words: collision detection, BVH, PSO, parallel Abstract.
Grimsdale: Computer Graphics Forum.
Manocha: Computer Graphics Forum(2009) [8] S.
Forum Vol. 29(2010), p.1605–1612 [9] J.W.
Li, et al: Intelligent System Design and Engineering Application (ISDEA), 2012 Second International Conference on.

Macroscopic Modelling of Flow-Drill Screw Connections Johan Kolstø Sønstabø1,2,a*, David Morin1,2,b and Magnus Langseth1,2,c 1Centre for Advanced Structural Analysis (CASA), Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway 2Structural Impact Laboratory (SIMLab), Department of Structural Engineering, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway ajohan.k.sonstabo@ntnu.no, bdavid.morin@ntnu.no, cmagnus.langseth@ntnu.no Keywords: Flow-drill screw, Connection, Macroscopic, Finite Element, Large-scale, Automotive Abstract.
Haufe, "An Investigation on Spot Weld Modelling for Crash Simulation with LS-DYNA," in 4th LS-DYNA User Forum, Bamberg, 2005
LS-DYNA forum, Bramberg, 2010
Sommer, "Advanced investigations on a simplified modeling method of self-piercing riveted joints for crash simulation," presented at the 11.
LS-DYNA Forum, Ulm, 2012

The basic idea was to establish a periodical international forum for multiscale approaches in fatigue and fracture of materials in the middle of Europe.
Therefore, respective sections focused on atomistic models, models based on crystal defects, numerical and statistical continuum models, advanced experimental methods and relationships between microstructure and mechanical properties appeared during the MSMF-2 conference in 1998.
It is my pleasure to thank the editorial board of the journal Key Engineering Materials for the readiness to publish this volume devoted to MSMF-7.

In order to provide the maximum safety for the passengers simultaneously with the lowering operational weight of vehicles, the advanced high-strength steels (HSS, AHSS) have been recently used in the production of car bodies.
Materials Science Forum. 2012, 706-709, s. 2320-2325.
Advanced materials in automotive engineering. 
Materials Science Forum. 2012, 706-709, s. 2320-2325.

Preface This volume contains 74 contributions to the 6th International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" - GADEST '95, held from September 2 to 7 in Parkhotel SchloB Wulkow, Germany, and organized by the Institut fiir Halbleiterphysik Frankfurt (Oder) GmbH.
Defect control and defect engineering have by now become an important sector of modern semiconductor technology.
Additionally, the use of heterostructures can reduce the vertical device dimensions, making this approach of interest for advanced CMOS variants with lateral structures below 0.2 μm as hetero-CMOS for fast integrated circuits.
The influence of new deposition techniques and low-temperature processing, process-induced defects, contamination by metals, and mechanical strain pose demanding new questions for defect engineering.
The large interest engendered by the conference in the past emphasizes once again the fundamental importance of a meeting which serves as a forum for scientists and engineers working at unjversities, research institutes, and industrial laboratories in the east and the west, both for providing deeper insi ght into defects in semiconductors and for discussing up-to-date effects and procedures of gettering and defect engineering.

Solvent Design for High-Purity SiC Solution Growth Shunta Harada1,2, a*, Goki Hatasa2, b, Kenta Murayama1, c, Tomohisa Kato3, d, Miho Tagawa1,2, e, Toru Ujihara1,2, f 1Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan 2Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan 3Advanced Power Electronics Research Center (APERC), National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan aharada@numse.nagoya-u.ac.jp, bhatasa.gouki@f.mbox.nagoya-u.ac.jp, cmura_mura@sic.numse.nagoya-u.ac.jp, dt-kato@aist.go.jp, emtagawa@numse.nagoya-u.ac.jp, fujihara@nagoya-u.jp, Keywords: SiC, top-seeded solution growth, impurity, CALPHAD, yttrium Abstract.
Forum, 740-742 (2013) 189
Forum, 457-460 (2004) 123
Forum, 645-648 (2010) 13
Forum 740-742 (2013) 73.