Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy
p.363
p.363
Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
p.367
p.367
Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode
p.371
p.371
Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope
p.375
p.375
Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF3 Gas
p.379
p.379
Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate
p.383
p.383
Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes
p.387
p.387
Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers
p.391
p.391
Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC
p.395
p.395
Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF3 Gas
Abstract:
The etch pit density produced on the C-face 4H-SiC substrate using chlorine trifluoride gas at various temperatures was evaluated. Because the etch pit density formed at the substrate temperature of 713 K showed the comparable value to the current dislocation level of the Si-face 4H-SiC, the etch pit density obtained by this technique is considered to have a relationship with the crystal quality.
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Periodical:
Materials Science Forum (Volumes 717-720)
Pages:
379-382
Citation:
Online since:
May 2012
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© 2012 Trans Tech Publications Ltd. All Rights Reserved
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