Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy

Tamotsu Yamashita; Kenji Momose; Daisuke Muto; Yoshiki Shimodaira; Kuniaki Yamatake; Yoshihiko Miyasaka; Takayuki Sato; Hirofumi  Matsuhata; Makoto Kitabatake

doi:10.4028/www.scientific.net/MSF.717-720.363

Paper Titles

Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults
p.347

Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth
p.351

Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals
p.355

Correlation between Surface Morphological Defects and Crystallographic Defects in SiC
p.359

Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy
p.363

Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
p.367

Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode
p.371

Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope
p.375

Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF₃ Gas
p.379

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Characterization of Triangular-Defects in 4° off...

Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy

Abstract:

We report our investigation results on triangular-defects formed on 4deg. off 4H-SiC epi- taxial wafers. Triangular-defects that had neither down-falls nor basal-plane dislocations previously reported as origins of triangular-defects at the tips of triangle were investigated by TEM. Our TEM results revealed that foreign materials contamination that were different from well-known down- -falls in size and in composition caused one of the defect formations and abnormal domain forma- tions were implied to occur and thought to relate to defect formations. We also report that several types of microstructure existed in the isosceles of defect during dislocation analyses around triangular-defects by X-ray topography.