Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer

Yukari Ishikawa; Yong Zhao Yao; Yoshihiro Sugawara; Katsunori Danno; Hiroshi Suzuki; Yoichiro Kawai; Noriyoshi Shibata

doi:10.4028/www.scientific.net/MSF.717-720.367

Paper Titles

Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth
p.351

Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals
p.355

Correlation between Surface Morphological Defects and Crystallographic Defects in SiC
p.359

Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy
p.363

Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
p.367

Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode
p.371

Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope
p.375

Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF₃ Gas
p.379

Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate
p.383

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Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer

Abstract:

The wide size distribution of the hexagonal etch pit of screw dislocations (SD) in 4H-SiC wafer was found in spite of the narrow size distribution of the SD pit in epitaxial film. Calculation on the basis of the strain energy equation indicated that etch pit size depends on the Burgers vector and dislocation tilt. Size variation of SD etch pits in 4H-SiC wafer fabricated by sublimation method is explained to be caused by the dislocation tilt by observing the sizes and the positions of etch pits from the surface of the epitaxial film to the inside of 4H-SiC wafer. The SDs in 4H-SiC wafer fabricated by sublimation method propagate to c-axis direction in macroscopic but changing tilt in microscopic.