Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode

Tsuyoshi Ishikawa; T. Katsuno; Y. Watanabe; H. Fujiwara; T. Endo

doi:10.4028/www.scientific.net/MSF.717-720.371

Paper Titles

Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals
p.355

Correlation between Surface Morphological Defects and Crystallographic Defects in SiC
p.359

Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy
p.363

Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
p.367

Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode
p.371

Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope
p.375

Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF₃ Gas
p.379

Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate
p.383

Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes
p.387

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Critical Density of Nanoscale Pits for Suppressing...

Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode

Abstract:

We investigate the influence of SiC surface morphology on increase and variability in reverse leakage current of SiC Schottky barrier diodes using device simulation. It is found that etch pits with only a few tens of nm in depth has a large influence on leakage current and is also shown that leakage current is sensitive to both etch pit shape and density. From these results, we suggest the critical density of nanoscale pit, which is suppressing the variability of leakage current, at various drift layer thickness t_drift and doping concentration N_drift.

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Materials Science Forum (Volumes 717-720)

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371-374

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.371

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Online since:

May 2012

Authors:

Tsuyoshi Ishikawa, T. Katsuno, Y. Watanabe, H. Fujiwara, T. Endo

Keywords:

Device Simulation, Leakage Current, Schottky Barrier Diode (SBD), Silicon Carbide (SiC), Surface Morphology, Surface Roughness (SR)

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