Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals

Masakazu Katsuno; Tatsuo Fujimoto; Hirokatsu Yashiro; Hiroshi Tsuge; Shinya Sato; Hosei Hirano; Takayuki Yano; Wataru Ohashi

doi:10.4028/www.scientific.net/MSF.717-720.355

Paper Titles

Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC
p.339

Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
p.343

Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults
p.347

Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth
p.351

Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals
p.355

Correlation between Surface Morphological Defects and Crystallographic Defects in SiC
p.359

Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy
p.363

Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
p.367

Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode
p.371

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Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals

Abstract:

Structures and propagating behaviors of threading dislocations (TDs) in PVT-grown 4H-SiC single crystals were both investigated using Synchrotron monochromatic X-ray topography. Comparative studies by examining images obtained for the crystals with different diffraction geometries of (0004) and (11-20) of 4H-SiC revealed that a large amount of TDs are likely to be mixed in character, i.e., dislocations with Burgers vector components of both <0004> and <11-20>. Closer observations of topography images has revealed that, although TDs lie largely along the c-axis direction, some of the TDs show quite a complex propagating behavior: not extending in a straight line but meandering along the growth direction.