Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC

Jean Luc Demenet; Madyan Amer; Christophe Tromas; Jacques Rabier

doi:10.4028/www.scientific.net/MSF.717-720.339

Paper Titles

X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC
p.323

Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC
p.327

Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy
p.331

Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers
p.335

Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC
p.339

Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
p.343

Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults
p.347

Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth
p.351

Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals
p.355

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Analysis of Dislocations Nucleated after Nano...

Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC

Abstract:

4H-SiC intrinsic homoepitaxied single crystals have been nano indented at room temperature using a spherical indentor and the related deformation microstructures have been analyzed by Transmission Electron Microscopy. Dislocations are lying in the basal plane but have been found to be perfect, in contrast with observations made at higher temperature. Although such a change in deformation mechanism has been observed in other semiconductors such as Silicon and Indium Antimonide, it was unexpected in a very low stacking fault material such as SiC.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

339-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.339

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Online since:

May 2012

Authors:

Jean Luc Demenet, Madyan Amer, Christophe Tromas, Jacques Rabier

Keywords:

Dislocation, Nano Indentation, Silicon Carbide (SiC), TEM

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