X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC

Ryohei Tanuma; Daisuke Mori; Isaho Kamata; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.717-720.323

Paper Titles

Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer
p.305

Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes
p.309

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers
p.313

Fourier Transform Analysis of Basal Plane Dislocation Structure in Repeated A-Face Grown Crystals
p.319

X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC
p.323

Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC
p.327

Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy
p.331

Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers
p.335

Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC
p.339

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X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC

Abstract:

This paper demonstrates the X-ray three-dimensional (3D) topography of basal-plane dislocations (BPDs) and threading edge dislocations (TEDs) in 4H-SiC for the first time. Stereographic topographs are obtained for BPDs and TEDs, showing the propagation of BPDs from a substrate to an epilayer and the conversion of BPDs into TEDs near the epilayer/substrate interface. Strain analysis is also demonstrated for a TED, providing the image of strains in the order of ±10-5. It is verified that the 3D topography is successfully applicable to BPDs and TEDs.