Fourier Transform Analysis of Basal Plane Dislocation Structure in Repeated A-Face Grown Crystals

Itaru Gunjishima; Yasushi Urakami; Fusao Hirose; Ayumu Adachi; Shoichi Onda; Koichi Nishikawa

doi:10.4028/www.scientific.net/MSF.717-720.319

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Fourier Transform Analysis of Basal Plane...

Fourier Transform Analysis of Basal Plane Dislocation Structure in Repeated A-Face Grown Crystals

Abstract:

Morphological features, such as the orientation and linearity of basal plane dislocations (BPDs) in SiC crystals, were analyzed by applying a two-dimensional fast Fourier transform (2D-FFT) to X-ray topographic images of the BPDs. An SiC crystal fabricated by an improved repeated a-face (RAF) method and an SiC crystal fabricated by an conventional RAF method discussed in a previous study were evaluated. In the 2D-FFT images of the improved crystal, streaks along the directions were observed, indicating that the BPDs were highly oriented along the directions. The degree of orientation of the BPDs, which may reflect their linearity, was calculated, and the improved RAF crystal had a much higher degree of orientation than the conventional RAF crystal.

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Silicon Carbide and Related Materials 2011

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

319-322

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.319

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Online since:

May 2012

Authors:

Itaru Gunjishima, Yasushi Urakami, Fusao Hirose, Ayumu Adachi, Shoichi Onda, Koichi Nishikawa

Keywords:

Basal Plane Dislocation (BPD), Bulk Growth, Fourier Transformation, X-Ray Topography

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