Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes

Kęstutis Jarašiūnas; Patrik Ščajev; Tadas Malinauskas; Masashi Kato; Evgenii Ivakin; Milos Nesladek; Ken Haenen; Ümit Özgür; Hadis Morkoç

doi:10.4028/www.scientific.net/MSF.717-720.309

Paper Titles

High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
p.293

Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers
p.297

Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches
p.301

Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer
p.305

Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes
p.309

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers
p.313

Fourier Transform Analysis of Basal Plane Dislocation Structure in Repeated A-Face Grown Crystals
p.319

X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC
p.323

Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC
p.327

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Carrier Diffusivity in Highly Excited Bulk SiC,...

Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes

Abstract:

Optical monitoring of diffusivity in wide bandgap semiconductors was performed by using a picosecond light-induced transient grating technique. The bandgap renormalization and carrier-carrier scattering manifested itself at room temperature as two-fold decrease of the ambipolar diffusion coefficient Da in cubic SiC and 5-fold decrease of Da in diamond at excess carrier density N > 10¹⁷ cm^-3, while for GaN the impact was observed only at T 19 cm^-3, the plasma degeneracy led to enhanced D_a values in SiC and GaN and compensated the diffusivity decrease in diamond.

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Silicon Carbide and Related Materials 2011

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Materials Science Forum (Volumes 717-720)

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309-312

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.309

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Online since:

May 2012

Authors:

Kęstutis Jarašiūnas, Patrik Ščajev, Tadas Malinauskas, Masashi Kato, Evgenii Ivakin, Milos Nesladek, Ken Haenen, Ümit Özgür, Hadis Morkoç

Keywords:

Ambipolar Diffusion, Degeneracy, Diamond, Gallium Nitride (GaN), Light-Induced Transient Grating, Nonequilibrium Carriers

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