Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer

Atsushi Yoshida; Masashi Kato; Masaya Ichimura

doi:10.4028/www.scientific.net/MSF.717-720.305

Paper Titles

Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
p.289

High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
p.293

Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers
p.297

Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches
p.301

Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer
p.305

Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes
p.309

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers
p.313

Fourier Transform Analysis of Basal Plane Dislocation Structure in Repeated A-Face Grown Crystals
p.319

X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC
p.323

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Correlation between Strain and Excess Carrier...

Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer

Abstract:

We obtained excess carrier lifetime maps by the microwave photoconductivity decay (µ-PCD) method in a free-standing n-type 3C-SiC wafer, and then we compared the lifetime maps with distributions of strains and defects observed by the optical microscopy and the Raman spectroscopy. We found that the excess carrier lifetimes are short in a strained region in 3C-SiC, which indicates that structural defects exist around a strained region.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2011

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

305-308

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.305

Citation:

Cite this paper

Online since:

May 2012

Authors:

Atsushi Yoshida, Masashi Kato, Masaya Ichimura

Keywords:

µ-PCD Method, 3C-SiC, Carrier Lifetime, Strain

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] T. Ohshima, K. K. Lee, Y. Ishida, K. Kojima, Y. Tanaka, T. Takahashi, M. Yoshikawa, H. Okumura, K. Arai and T. Kamiya, Jpn. J. Appl. Phys. Vol. 42 (2003) p. L625.

DOI: 10.1143/jjap.42.l625

Google Scholar

[2] V. Grivackas, G. Manolis, K. Gulbinas, K. Jarašiūnas, and M. Kato, Appl. Phys. Lett. Vol.95 (2009) 242110.

Google Scholar

[3] M. Ichimura, N. Yamada, H. Tajiri, and E. Arai, J. Appl. Phys. Vol. 84 (1998) p.2727.

Google Scholar

[4] P. Ščajev, J. Hassan, K. Jarašiūnas, M. Kato, A. Henry, and J. P. Bergman, J. Electron. Mater. Vol.40 (2010) p.394.

Google Scholar

[5] H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, G. Pensl, W. J. Choyke, T. Yamada, K. M. Itoh and A. Schöner: W. J. Choyke, H. Matsunami, G. Pensl (Eds.), Silicon Carbide, Springer-Verlag, Berlin, Heidelberg (2004) p.207.

DOI: 10.1007/978-3-642-18870-1_9

Google Scholar