Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers

Xuan Zhang; Tetsuya Miyazawa; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.717-720.313

Paper Titles

Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers
p.297

Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches
p.301

Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer
p.305

Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes
p.309

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers
p.313

Fourier Transform Analysis of Basal Plane Dislocation Structure in Repeated A-Face Grown Crystals
p.319

X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC
p.323

Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC
p.327

Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy
p.331

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Critical Conditions of Misfit Dislocation...

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers

Abstract:

Thermal annealing experiments were performed to determine the critical conditions of misfit dislocation formation in 4H-SiC epilayers in a temperature range of 1400-1800 °C. Misfit dislocations were observed to form at a given annealing temperature if the temperature gradient across the epi-wafer exceeded a critical value. It was also found that two types of interfacial dislocations could form under different stress conditions. Their formation mechanisms are discussed.

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Materials Science Forum (Volumes 717-720)

Pages:

313-318

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.313

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Online since:

May 2012

Authors:

Xuan Zhang, Tetsuya Miyazawa, Hidekazu Tsuchida

Keywords:

4H-SiC, Annealing, Basal Plane Dislocation (BPD), Interfacial Dislocations, Misfit Dislocation, Misfit Stress, Thermal Stress

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References

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