Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy

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Using 6H SiC wafers including regions with a varying residual stress, the birefringence pattern of almost vertical dislocations is measured and modeled. We show that it is possible to identify the basal plane component of "small" dislocations by a quantitative fit of the birefringence pattern. Combining birefringence and etch pit detection after KOH etching shows that most of the vertical dislocations are of a mixed nature, exhibiting both an edge and a screw component.

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Periodical:

Materials Science Forum (Volumes 717-720)

Edited by:

Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck

Pages:

331-334

Citation:

L. T. M. Hoa et al., "Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy", Materials Science Forum, Vols. 717-720, pp. 331-334, 2012

Online since:

May 2012

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$38.00

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