Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy

Le Thi Mai Hoa; Thierry Ouisse; M. Seiss; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.717-720.331

Paper Titles

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers
p.313

Fourier Transform Analysis of Basal Plane Dislocation Structure in Repeated A-Face Grown Crystals
p.319

X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC
p.323

Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC
p.327

Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy
p.331

Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers
p.335

Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC
p.339

Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
p.343

Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults
p.347

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Identification of the Basal Plane Component of the...

Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy

Abstract:

Using 6H SiC wafers including regions with a varying residual stress, the birefringence pattern of almost vertical dislocations is measured and modeled. We show that it is possible to identify the basal plane component of "small" dislocations by a quantitative fit of the birefringence pattern. Combining birefringence and etch pit detection after KOH etching shows that most of the vertical dislocations are of a mixed nature, exhibiting both an edge and a screw component.

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Silicon Carbide and Related Materials 2011

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Materials Science Forum (Volumes 717-720)

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331-334

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.331

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Online since:

May 2012

Authors:

Le Thi Mai Hoa, Thierry Ouisse, M. Seiss, Didier Chaussende

Keywords:

Birefringence, Dislocation, Optical Microscopy, Residual Stress

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