Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers

Xuan Zhang; Masahiro Nagano; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.717-720.335

Paper Titles

Fourier Transform Analysis of Basal Plane Dislocation Structure in Repeated A-Face Grown Crystals
p.319

X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC
p.323

Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC
p.327

Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy
p.331

Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers
p.335

Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC
p.339

Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
p.343

Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults
p.347

Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth
p.351

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Effects of Nitrogen Doping on the Morphology of...

Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers

Abstract:

Morphologies of BPDs in 4H-SiC epilayers with different nitrogen doping concentrations are explained in detail. While BPDs in low-doped epilayers have the typical morphology of gliding dislocations responding to stress, BPDs in highly doped ([N]≥1.0×10¹⁸ cm^-3) epilayers are straight and tilt away from [11-20]. Structures of BPDs are further studied by weak-beam TEM.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

335-338

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.335

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Online since:

May 2012

Authors:

Xuan Zhang, Masahiro Nagano, Hidekazu Tsuchida

Keywords:

4H-SiC, Basal Plane Dislocation (BPD), C-Core Partials, Nitrogen Doping, Si-Core Partials, Stacking Fault

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References

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