Correlation between Surface Morphological Defects and Crystallographic Defects in SiC

Tetsuo Hatakeyama; Kyoichi Ichinoseki; Hiroshi Yamaguchi; N. Sugiyama; Hirofumi  Matsuhata

doi:10.4028/www.scientific.net/MSF.717-720.359

Paper Titles

Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
p.343

Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults
p.347

Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth
p.351

Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals
p.355

Correlation between Surface Morphological Defects and Crystallographic Defects in SiC
p.359

Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy
p.363

Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
p.367

Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode
p.371

Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope
p.375

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Correlation between Surface Morphological Defects...

Correlation between Surface Morphological Defects and Crystallographic Defects in SiC

Abstract:

The origins of certain types of micrometer-scale surface morphological defects on SiC epitaxial layers are clarified using X-ray topography. Two types of surface morphological defects are commonly observed on Si- and C-face epitaxial layers. Relatively large pits (around 4μm×2μm) originate from threading screw dislocations (TSDs). Relatively small pits (around 1.5μm×1μm) originate from threading edge dislocations (TEDs). The shapes and depths of these surface morphological pits depend on the fabrication history of the epitaxial wafers.