Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope

Takashi Katsuno; Yukihiko Watanabe; Tsuyoshi Ishikawa; Hirokazu Fujiwara; Masaki Konishi; Tomoo Morino; Takeshi Endo

doi:10.4028/www.scientific.net/MSF.717-720.375

Paper Titles

Correlation between Surface Morphological Defects and Crystallographic Defects in SiC
p.359

Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy
p.363

Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
p.367

Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode
p.371

Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope
p.375

Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF₃ Gas
p.379

Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate
p.383

Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes
p.387

Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers
p.391

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Surface Morphology of Leakage Current Sources of...

Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope

Abstract:

The leakage current sources of 4H-SiC Schottky barrier diodes (SBDs) were analyzed using atomic force microscopy (AFM) to determine the surface morphology. Nanosized circular cone shaped pits (nanopits), which depth were distributed from 5 to 70 nm, were observed at the leakage current sources. The leakage currents of 4H-SiC SBDs generate at the nanopits due to the concentration of the electrical field strength. The positions of nanopits correspond to the positions of threading dislocations (TDs), which were identified from molten potassium hydroxide (KOH) etching.

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Materials Science Forum (Volumes 717-720)

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375-378

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.375

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Online since:

May 2012

Authors:

Takashi Katsuno, Yukihiko Watanabe, Tsuyoshi Ishikawa, Hirokazu Fujiwara, Masaki Konishi, Tomoo Morino, Takeshi Endo

Keywords:

4H-SiC, Defect, Schottky Barrier Diode (SBD), Surface Morphology, Threading Dislocation

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