Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate

Yukari Ishikawa; Koji Sato; Yoshihiro Okamoto; Noritaka Hayashi; Yong Zhao Yao; Yoshihiro Sugawara

doi:10.4028/www.scientific.net/MSF.717-720.383

Paper Titles

Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
p.367

Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode
p.371

Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope
p.375

Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF₃ Gas
p.379

Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate
p.383

Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes
p.387

Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers
p.391

Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC
p.395

Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density
p.399

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Dislocation Formation in Epitaxial Film by...

Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate

Abstract:

Shallow defects, which were induced by mechanical treatment, on 4H-SiC wafers were investigated. The density and the distribution in depth of shallow defects on the wafers were depended on wafer venders. Most of serious defects such as dislocation array (DA), triangular stacking fault (TRSF) and triangular defect (TRD) in epitaxial film were demonstrated to be caused by shallow dislocations on the surface of the wafers. Revised mechanical polish can reduce the densities of DA, TRSF and TRD in epitaxial film.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

383-386

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.383

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Online since:

May 2012

Authors:

Yukari Ishikawa, Koji Sato, Yoshihiro Okamoto, Noritaka Hayashi, Yong Zhao Yao, Yoshihiro Sugawara

Keywords:

Dislocation, Dislocation Array, Half-Loop, Polish, Shallow, Stacking Fault, Triangular Defect

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References

[1] N. Zhang, Y. Chen, E. K. Sanchez, D. R. Black, and M. Dudley: Materials Science Forum, 615-617 (2009) pp.139-142.

Google Scholar

[2] A. Shrivastava, P. G. Muzykov, B. Pearman, S. Michael Angel, and T. S. Sudarshan: Materials Science Forum, 600-603 (2009) pp.109-142.

DOI: 10.4028/www.scientific.net/msf.600-603.139

Google Scholar

[3] M. Skowronski, and S. Ha: J. Appl. Phys. 99 (2006) 011101-1 -011101-24.

Google Scholar

[4] Y. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai, and N. Shibata: Mater. Sci. Forum, 679-680 (2011) pp.294-297.

Google Scholar

[5] Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, Y. Kawai, N. Shibata, T. Hirayama, and Y. Ikuhara: Materials Science Forum, 645-648 (2010) pp.351-354.

DOI: 10.4028/www.scientific.net/msf.645-648.351

Google Scholar