Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density

Sabih U.  Omar; Hai Zheng Song; Tangali S. Sudarshan; M.V.S. Chandrashekhar

doi:10.4028/www.scientific.net/MSF.717-720.399

Paper Titles

Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate
p.383

Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes
p.387

Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers
p.391

Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC
p.395

Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density
p.399

Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging
p.403

Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates
p.407

Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals
p.411

Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping
p.415

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Room Temperature Photoluminescence from 4H-SiC...

Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density

Abstract:

Room temperature photoluminescence was obtained by UV excitation of homoepitaxially grown 4H-SiC thin films. A broad band emission from boron deep levels centered at 517nm was observed along with the band-edge emission of 4H-SiC at 391 nm. The wavelength of the excitation was varied and the change in the relative intensity of the two emission peaks was observed. The variation of the relative intensity was correlated with the in-grown stacking fault density in the epilayer. A physical model was developed to explain the correlation in terms of carrier diffusion length. For epilayers with very high density of in-grown stacking faults, a sharp emission was observed at 480nm.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2011

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

399-402

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.399

Citation:

Cite this paper

Online since:

May 2012

Authors:

Sabih U. Omar, Hai Zheng Song, Tangali S. Sudarshan, M.V.S. Chandrashekhar

Keywords:

4H-SiC, Carrier Diffusion Length, Photoluminescence (PL), Stacking Fault

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] H. Fujiwara, T. Kimoto, T. Tojo, and H. Matsunami, Appl. Phys. Lett. 87 (2005) 051912.

Google Scholar

[2] G. Feng, J. Suda, and T. Kimoto, Appl. Phys. Lett. 92 (2008) 221906.

Google Scholar

[3] G. Feng, J. Suda, and T. Kimoto, Appl. Phys. Lett. 94 (2009) 091910.

Google Scholar

[4] A. Kakanakova-Georgieva, R. Yakimova, A. Henry, M. K. Linnarsson, M. Syväjärvi, and E. Janzén, J. Appl. Phys. 91 (2002) 2890.

DOI: 10.1063/1.1436293

Google Scholar

[5] S. G Sridhara, L. L. Clemen, R. P. Devaty, W. J. Choyke, D. J. Larkin, H. S. Kong, T. Troffer, and G. Pensl, J. Appl. Phys. 84, 5 (1998) 2963-2964.

DOI: 10.4028/www.scientific.net/msf.264-268.455

Google Scholar

[6] A. Henry, I. G. Ivanov A. Ellison, and E. Janzén, Materials Science and Engineering B61–62 (1999) 234–238.

Google Scholar

[7] S. G. Sridhara, T. J. Eperjesi, R. P. Devaty, and W. J. Choyke, Materials Science and Engineering B61–62 (1999) 229–233.

Google Scholar

[8] H. Song, S. U. Omar, T. Rana, MVS Chandrashekhar, and T. S. Sudarshan, In-Grown Stacking Faults in SiC-CVD using Dichlorosilane and Propane as Precursors, these Proceedings.

DOI: 10.4028/www.scientific.net/msf.717-720.121

Google Scholar

[9] A. Shrivastava, P. Muzykov, and T. S. Sudarshan, J. Appl. Phys. 104 (2008) 093532.

Google Scholar