Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC

Rii Hirano; Yuki Sato; Michio Tajima; Kohei M. Itoh; Koji Maeda

doi:10.4028/www.scientific.net/MSF.717-720.395

Paper Titles

Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF₃ Gas
p.379

Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate
p.383

Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes
p.387

Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers
p.391

Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC
p.395

Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density
p.399

Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging
p.403

Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates
p.407

Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals
p.411

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Photoluminescence Study of the Driving Force for...

Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC

Abstract:

We investigated expansion velocities of Shockley stacking faults (SSFs) in 4H-silicon carbide under laser illumination using photoluminescence methods. The experiments showed that the velocity of SSF expansion or the glide velocity of SSF-bounding 30°-Si(g) partial dislocations (PD) is supralinearly dependent on the excitation intensity. We estimated sample temperature by analyzing the broadening of band-edge emission and concluded that the lattice heating by laser illumination is not the cause of the enhanced dislocation glide. The supralinear dependence can be accounted for by a photo-induced sign reversal of the effective formation energy of SSF acting as the driving force of SSF expansion under the illumination.

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Materials Science Forum (Volumes 717-720)

Pages:

395-398

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.395

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Online since:

May 2012

Authors:

Rii Hirano, Yuki Sato, Michio Tajima, Kohei M. Itoh, Koji Maeda

Keywords:

4H-SiC, Photoluminescence (PL), Radiation-Enhanced Dislocation Glide, Stacking Fault

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