Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates

J.W. Sun; T. Robert; Valdas Jokubavicius; Sandrine Juillaguet; Rositza Yakimova; Mikael Syväjärvi; Jean Camassel

doi:10.4028/www.scientific.net/MSF.717-720.407

Paper Titles

Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers
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Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC
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Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density
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Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging
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Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates
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Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals
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Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping
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On the Twin Boundary Propagation in (111) 3C-SiC Layers
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Defect Structures at the Silicon/3C-SiC Interface
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Low Temperature Photoluminescence Signature of...

Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates

Abstract:

The radiative recombination spectra of 6H-SiC epilayers grown on low angle (1.4° off-axis) substrates have been investigated by low temperature photoluminescence spectroscopy. Four different types of stacking faults have been identified, together with the presence of 3C-SiC inclusions. From the energy of the momentum-conserving phonons, four excitonic band gap energies have been found with Egx equal to 2.837, 2.698, 2.600 and 2.525 eV. These photoluminescence features, which give a rapid and non-destructive approach to identify stacking faults in 6H-SiC, provide a direct feedback to improve the material growth.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

407-410

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.407

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Online since:

May 2012

Authors:

J.W. Sun, T. Robert, Valdas Jokubavicius, Sandrine Juillaguet, Rositza Yakimova, Mikael Syväjärvi, Jean Camassel

Keywords:

Low Temperature Photoluminescence, Stacking Fault

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References

[1] For a review, see: Silicon Carbide: Recent Major Advances, edited by W.J. Choyke, H. Matsunami, and G. Pensl (Springer, New York, 2004) pages 89-116.

DOI: 10.1007/978-3-642-18870-1

Google Scholar

[2] For a recent review, see J. Camassel and S. Juillaguet, Phys. Stat. Sol. (b) 245 (2008) 1337.

Google Scholar

[3] J. Takahashi, N. Ohtani, M. Katsuno, and S. Shinoyama, J. Cryst. Growth, 181 (1997) 229.

Google Scholar

[4] J. Q. Liu, E. K. Sanchez, and M. Skowronski, Mater. Sci. Forum 389–393 (2002) 435.

Google Scholar

[5] S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, J. Semiconductors 32 (2011) 13004.

DOI: 10.1088/1674-4926/32/1/013004

Google Scholar

[6] V. Jokubavicius, R. Liljedahl, Y. Y. Ou, H. Y. Ou, S. Kamiyama, R. Yakimova, and M. Syväjärvi, Mater. Sci. Forum 679–680 (2011) 103.

DOI: 10.4028/www.scientific.net/msf.679-680.103

Google Scholar

[7] M. Syväjärvi and R. Yakimova: "Sublimation epitaxial growth of hexagonal and cubic SiC", Elsevier, chapter in encyclopedia - The Comprehensive Semiconductor Science & Technology (SEST), Pallab Bhattacharya, Roberto Fornari and Hiroshi Kamimura (Eds), ISBN 978-0-444-53144-5 (2011).

DOI: 10.1016/b978-0-44-453153-7.00092-4

Google Scholar

[8] M. Ikeda, H. Matsunami, and T. Tanaka, Phys. Rev. B 22 (1980) 2842.

Google Scholar

[9] W. J. Choyke, D. R. Hamilton, and L. Patrick, Phys. Rev. 133 (1964) A1163.

Google Scholar