Defect Structures at the Silicon/3C-SiC Interface

Philip Hens; Julian Müller; Erdmann Spiecker; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.717-720.423

Paper Titles

Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates
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Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals
p.411

Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping
p.415

On the Twin Boundary Propagation in (111) 3C-SiC Layers
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Defect Structures at the Silicon/3C-SiC Interface
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Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO₂ Interfaces
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Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap
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Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
p.437

Sub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS Capacitors
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Defect Structures at the Silicon/3C-SiC Interface

Defect Structures at the Silicon/3C-SiC Interface

Abstract:

In all heteroepitaxial systems the interface between substrate and layer is a crucial point. In this work SEM and TEM studies on the interface between silicon substrate and cubic silicon carbide (3C-SiC) layers obtained by chemical vapor deposition (CVD) are presented. A clear connection between process parameters, like the design of substrate cleaning, and the heating ramp, and resulting defect structures at the substrate-layer interface could be found. Whereas the process step of etching in hot hydrogen for oxide removal is crucial for avoiding the generation of closed voids of type 2, the design of the temperature ramp up to growth temperature during carbonization influences the interface roughness. Here a fast ramp helps to obtain a flat interface.

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Silicon Carbide and Related Materials 2011

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

423-426

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.423

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Online since:

May 2012

Authors:

Philip Hens, Julian Müller, Erdmann Spiecker, Peter J. Wellmann

Keywords:

Cubic Silicon Carbide (3C-SiC), Dislocation, Heteroepitaxy, Interface, Roughness, Void

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References

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