Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs

Christian Strenger; Volker Haeublein; Tobias Erlbacher; Anton J. Bauer; Heiner Ryssel; Ana Maria Beltran; Sylvie Schamm-Chardon; Vincent Mortet; Eléna Bedel-Pereira; Mathieu Lefebvre; Fuccio Cristiano

doi:10.4028/www.scientific.net/MSF.717-720.437

Paper Titles

On the Twin Boundary Propagation in (111) 3C-SiC Layers
p.419

Defect Structures at the Silicon/3C-SiC Interface
p.423

Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO₂ Interfaces
p.427

Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap
p.433

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
p.437

Sub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS Capacitors
p.441

Oxidation-Induced Epilayer Carbon Di-Interstitials as a Major Cause of Endemically Poor Mobilities in 4H-SiC/SiO₂ Structures
p.445

Silicon Carbide-Silicon Dioxide Transition Layer Mobility
p.449

Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs
p.453

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Comparative Study of Electrical and...

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs

Abstract:

N-channel MOSFETs were manufactured on p-type and on p-implanted, n-type 4H-SiC substrates. The electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy. With regard to what was previously discussed in the literature, interfacial layer formation and carbon distribution across the SiC/SiO2 interface were considered in relation with the measured Hall electron mobility.

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Materials Science Forum (Volumes 717-720)

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437-440

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.437

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Online since:

May 2012

Authors:

Christian Strenger, Volker Haeublein, Tobias Erlbacher, Anton J. Bauer, Heiner Ryssel, Ana Maria Beltran, Sylvie Schamm-Chardon, Vincent Mortet, Eléna Bedel-Pereira, Mathieu Lefebvre, Fuccio Cristiano

Keywords:

4H-SiC MOSFET, Hall Mobility, HRTEM, SiC/SiO₂ Interface, Spatially-Resolved EELS

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