Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO2 Interfaces

Takahide Umeda; Ryouji Kosugi; Kenji Fukuda; Norio Morishita; Takeshi Ohshima; K. Esaki; J. Isoya

doi:10.4028/www.scientific.net/MSF.717-720.427

Paper Titles

Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals
p.411

Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping
p.415

On the Twin Boundary Propagation in (111) 3C-SiC Layers
p.419

Defect Structures at the Silicon/3C-SiC Interface
p.423

Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO₂ Interfaces
p.427

Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap
p.433

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
p.437

Sub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS Capacitors
p.441

Oxidation-Induced Epilayer Carbon Di-Interstitials as a Major Cause of Endemically Poor Mobilities in 4H-SiC/SiO₂ Structures
p.445

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Electrically Detected Magnetic Resonance (EDMR)...

Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO₂ Interfaces

Abstract:

We discuss the results of electrically detected magnetic resonance (EDMR) spectroscopy on SiC-SiO₂ interfaces interacting with hydrogen and nitrogen. Using EDMR, three types of 4H-SiC MOSFETs, which were prepared by dry oxidation (“Dry” sample), post hydrogen anneal (“Hydrogen” sample), and post nitridation anneal (“Nitrogen” sample), were examined in the temperature range of 4–300 K. These samples revealed several different results from the earlier ESR (electron spin resonance) and EDMR studies on SiC-SiO₂ interfaces. The most significant finding was the high-density doping of nitrogen into the channel region after the post nitridation anneal. The incorporated nitrogen donors were observed as the “Nh” EDMR signal at 4–20 K. Roles of these nitrogen donors are discussed in correlation with the electrical properties of SiC MOSFETs.