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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Oxidation-Induced Epilayer Carbon Di-Interstitials...

Oxidation-Induced Epilayer Carbon Di-Interstitials as a Major Cause of Endemically Poor Mobilities in 4H-SiC/SiO₂ Structures

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Abstract:

The defects at the interface and in the oxide have been considered as the sources of mobility degradation at the SiC/SiO₂ interface as in the case of Si/SiO₂ system. By examining available experimental and theoretical results and performing new calculations, we show that thermal oxidation creates immobile carbon di-interstitial defects inside the semiconductor substrate, which are a major cause of the poor mobility in SiC/SiO₂ structures.

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Silicon Carbide and Related Materials 2011

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Periodical:

Materials Science Forum (Volumes 717-720)

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445-448

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.445

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Online since:

May 2012

Authors:

Xiao Shen, Sokrates T. Pantelides

Keywords:

Channel Traps, Defect Complexes, Mobility Degradation, Oxidation

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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