Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap

Corey J. Cochrane; Patrick M. Lenahan; Aivars J. Lelis

doi:10.4028/www.scientific.net/MSF.717-720.433

Paper Titles

Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping
p.415

On the Twin Boundary Propagation in (111) 3C-SiC Layers
p.419

Defect Structures at the Silicon/3C-SiC Interface
p.423

Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO₂ Interfaces
p.427

Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap
p.433

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
p.437

Sub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS Capacitors
p.441

Oxidation-Induced Epilayer Carbon Di-Interstitials as a Major Cause of Endemically Poor Mobilities in 4H-SiC/SiO₂ Structures
p.445

Silicon Carbide-Silicon Dioxide Transition Layer Mobility
p.449

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Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap

Abstract:

We utilize electrically detected magnetic resonance (EDMR) via spin dependent recombination (SDR) to provide a definitive identification of an interface/near interface defect present in a wide variety of 4H SiC/SiO2 metal oxide semiconducting field effect transistors (MOSFETs).