On the Twin Boundary Propagation in (111) 3C-SiC Layers

Maya Marinova; Ariadne Andreadou; Alkyoni Mantzari; Efstathios K. Polychroniadis

doi:10.4028/www.scientific.net/MSF.717-720.419

Paper Titles

Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging
p.403

Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates
p.407

Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals
p.411

Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping
p.415

On the Twin Boundary Propagation in (111) 3C-SiC Layers
p.419

Defect Structures at the Silicon/3C-SiC Interface
p.423

Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO₂ Interfaces
p.427

Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap
p.433

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
p.437

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720On the Twin Boundary Propagation in (111) 3C-SiC...

On the Twin Boundary Propagation in (111) 3C-SiC Layers

Abstract:

The present study reports on the propagation of twin boundaries in (111) 3C-SiC by means of conventional (CTEM) and high resolution transmission electron microscopy (HRTEM). The investigated 3C-SiC layers were homoepitaxially grown by Chemical Vapour Deposition (CVD) on layers previously grown by Vapor Liquid Solid (VLS) mechanism on 6H-SiC substrates. At the initial stages of growth the usual twin boundary that occurs is an incoherent {-211} Σ3 one. It transforms to more energetically favorable cases by several ways: (i) The initial {-211} boundary turns 90º, to a fully coherent (111) interface, forming microtwins; (ii) A step-like interface occurs with facets along the (111) and the {-211} planes; (iii) It transforms in a fourfold twin complex propagating to the surface.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

419-422

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.419

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Online since:

May 2012

Authors:

Maya Marinova, Ariadne Andreadou, Alkyoni Mantzari, Efstathios K. Polychroniadis

Keywords:

3C-SiC, TEM, Twin Boundary Propagation

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