Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals

Shinya Sato; T. Fujimoto; H. Tsuge; M. Katsuno; W. Ohashi

doi:10.4028/www.scientific.net/MSF.717-720.411

Paper Titles

Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC
p.395

Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density
p.399

Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging
p.403

Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates
p.407

Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals
p.411

Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping
p.415

On the Twin Boundary Propagation in (111) 3C-SiC Layers
p.419

Defect Structures at the Silicon/3C-SiC Interface
p.423

Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO₂ Interfaces
p.427

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Interaction of 6H-Type Stacking Faults with...

Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals

Abstract:

6H-type stacking faults (SFs) observed in PVT-grown 4H-SiC ingle crystals were investigated using Photoluminescence (PL) microscopy at room temperature. Structural analyses using high resolution X-ray topography have revealed that there exist no (n=4, 8) component in Burger’s vectors of the 6H-type SFs we observed, strongly suggesting that the 6H-type SFs are constructed either by insertions of very thin 6H-type foreign polytype inclusions or by successive repetitions of Shockley-type in-plane glides.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

411-414

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.411

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Online since:

May 2012

Authors:

Shinya Sato, T. Fujimoto, H. Tsuge, M. Katsuno, W. Ohashi

Keywords:

4H-SiC, PVT Growth, Silicon Carbide (SiC), Stacking Fault, Threading Screw Dislocation

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