Silicon Carbide-Silicon Dioxide Transition Layer Mobility

Shahrzad Salemi; Akin Akturk; Siddharth Potbhare; Aivars J. Lelis; Neil Goldsman

doi:10.4028/www.scientific.net/MSF.717-720.449

Paper Titles

Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap
p.433

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
p.437

Sub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS Capacitors
p.441

Oxidation-Induced Epilayer Carbon Di-Interstitials as a Major Cause of Endemically Poor Mobilities in 4H-SiC/SiO₂ Structures
p.445

Silicon Carbide-Silicon Dioxide Transition Layer Mobility
p.449

Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs
p.453

Total Near Interface Trap Density Calculation of 4H-SiC/SiO₂ Structures before and after Nitrogen Passivation
p.457

Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices
p.461

Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
p.465

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Silicon Carbide-Silicon Dioxide Transition Layer...

Silicon Carbide-Silicon Dioxide Transition Layer Mobility

Abstract:

We present transition layer electron mobility versus field curves for several 4H-SiC/SiO2 structures, simulated by a newly developed Monte Carlo simulator that uses density of states calculated by density functional theory (DFT). Our calculations show that among all structures, abrupt SiC/SiO2 has the highest transition layer mobility.