Silicon Carbide-Silicon Dioxide Transition Layer Mobility
p.449
p.449
Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs
p.453
p.453
Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation
p.457
p.457
Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices
p.461
p.461
Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
p.465
p.465
Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors
p.469
p.469
Low Frequency Noise in 4H-SiC Lateral JFET Structures
p.473
p.473
Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide
p.477
p.477
Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals
p.481
p.481
Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
Abstract:
A two-way tunneling model describing simultaneous oxide trap charging and discharging in SiC MOSFETs is presented, along with a comparison with experimental results. This model can successfully account for the variation in threshold-voltage instability observed as a function of bias-stress time, bias-stress magnitude, and measurement time.
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 717-720)
Pages:
465-468
Citation:
Online since:
May 2012
Authors:
Keywords:
Price:
Сopyright:
© 2012 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: