Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors

Takahiro Makino; Naoya Iwamoto; Shinobu Onoda; Takeshi Ohshima; Kazutoshi Kojima; Shinji Nozaki

doi:10.4028/www.scientific.net/MSF.717-720.469

Paper Titles

Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs
p.453

Total Near Interface Trap Density Calculation of 4H-SiC/SiO₂ Structures before and after Nitrogen Passivation
p.457

Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices
p.461

Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
p.465

Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors
p.469

Low Frequency Noise in 4H-SiC Lateral JFET Structures
p.473

Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide
p.477

Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals
p.481

Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC
p.485

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Peak Degradation of Heavy-Ion Induced Transient...

Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors

Abstract:

Peak value degradation of heavy-ion induced transient currents in Metal-Oxide-Semiconductor (MOS) capacitors fabricated on n-type and p-type 6H-SiC was observed. The capacitances of MOS capacitors measured during the ion irradiation suggest that the depletion layer width decreased with increasing number of incident ions and was saturated. Since the number of incident ions obtained at the peak current saturation corresponded to that at the saturation of the capacitance, the decrease in peak current can be interpreted in terms of the decrease in the depletion layer width.