Low Frequency Noise in 4H-SiC Lateral JFET Structures

Hua Khee Chan; Rupert C. Stevens; Jonathan P. Goss; Nicholas G. Wright; Alton B. Horsfall

doi:10.4028/www.scientific.net/MSF.717-720.473

Paper Titles

Total Near Interface Trap Density Calculation of 4H-SiC/SiO₂ Structures before and after Nitrogen Passivation
p.457

Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices
p.461

Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
p.465

Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors
p.469

Low Frequency Noise in 4H-SiC Lateral JFET Structures
p.473

Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide
p.477

Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals
p.481

Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC
p.485

High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals
p.489

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Low Frequency Noise in 4H-SiC Lateral JFET Structures

Abstract:

Low frequency noise on 4H-SiC low-level signal-lateral JFETs was systematically investigated. In contrast to previous studies, which are based upon high power vertical structures, this work investigates the low-frequency noise behaviour of low-level signal-lateral devices which are more relevant to the realisation of small signal amplifiers.The JFETs studied share an identical cross section, with different gate lengths and widths. For high temperature operation between 300K and 700K at VGS = 0V, the Normalised Power Spectral Density (NPSD) of the JFETs is proportional to ƒ^-1. The NPSD increases monotonically with temperature until a critical temperature, where it starts to decline. Two unique noise origins, fluctuation from bulk and SiO₂-SiC interface traps were observed across all the devices investigated. Low frequency noise for devices with a 50μm gate width is localised at the SiO₂-SiC interface, whereas for wider devices the noise is seen to be of bulk/substrate origin, which follows Hooge’s model.