High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals

Noboru Ohtani; Masakazu Katsuno; T. Fujimoto; S. Sato; Hiroshi Tsuge; Wataru Ohashi; Hirofumi  Matsuhata; Makoto Kitabatake

doi:10.4028/www.scientific.net/MSF.717-720.489

Paper Titles

Low Frequency Noise in 4H-SiC Lateral JFET Structures
p.473

Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide
p.477

Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals
p.481

Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC
p.485

High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals
p.489

On the Stability of 3C-SiC Single Crystals at High Temperatures
p.493

XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal
p.497

Origin of the Warpage of 3C-SiC Wafer: Effect of Nonuniform Intrinsic Stress
p.501

Raman Scattering and X-Ray Absorption from CVD Grown 3C-SiC on Si
p.505

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720High Resolution X-Ray Diffraction (HRXRD) Studies...

High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals

Abstract:

Defect formation during the early stages of physical vapor transport (PVT) growth of 4H-SiC was investigated using high resolution x-ray diffraction (HRXRD). Characteristic lattice bending behaviors were revealed in the nearby seed crystal regions of grown crystals. The lattice bending was localized in close proximity to the seed/grown crystal interface, and the (0001) basal planes bended convexly toward the growth direction, indicative of the insertion of extra-half planes pointing toward the growth direction during the initial stages of crystal growth. This paper discusses the possible mechanisms of the observed lattice bending and sheds light on the defect formation processes during PVT-growth of 4H-SiC single crystals.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2011

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

489-492

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.489

Citation:

Cite this paper

Online since:

May 2012

Authors:

Noboru Ohtani, Masakazu Katsuno, T. Fujimoto, S. Sato, Hiroshi Tsuge, Wataru Ohashi, Hirofumi Matsuhata, Makoto Kitabatake

Keywords:

High Resolution X-Ray Diffraction (HR-XRD), Lattice Plane Bending, Physical Vapor Transport (PVT) Growth

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J. Takahashi, M. Kanaya, Y. Fujiwara, J. Cryst. Growth 135 (1994) 61.

Google Scholar

[2] E. K. Sanchez, J. Q. Lin, M. De. Graef, M. Skowronski, W. M. Vetter, M. Dudley, J. Appl. Phys. 91 (2002) 1143.

Google Scholar

[3] S. Ha, G. S. Rohrer, M. Skowronski, V. D. Heydemann, D. W. Snyder, Mater. Sci. Forum 338–342 (2000) 67.

Google Scholar

[4] N. Ohtani, M. Katsuno, T. Fujimoto, M. Nakabayashi, H. Tsuge, H. Yashiro, T. Aigo, H. Hirano, T. Hoshino, W. Ohashi, Jpn. J. Appl. Phys. 48 (2009) 065503.

DOI: 10.1143/jjap.48.065503

Google Scholar

[5] S. P. Mehandru, A. B. Anderson, Phys. Rev. B 42 (1990) 9040.

Google Scholar