On the Stability of 3C-SiC Single Crystals at High Temperatures

Deborah Dompoint; Irina G. Galben-Sandulache; Alexandre Boulle; Didier Chaussende; Dominique Eyidi; Jean Luc Demenet; Marie France Beaufort; Jacques Rabier

doi:10.4028/www.scientific.net/MSF.717-720.493

Paper Titles

Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide
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Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals
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Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC
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High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals
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On the Stability of 3C-SiC Single Crystals at High Temperatures
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XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal
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Origin of the Warpage of 3C-SiC Wafer: Effect of Nonuniform Intrinsic Stress
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Raman Scattering and X-Ray Absorption from CVD Grown 3C-SiC on Si
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4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720On the Stability of 3C-SiC Single Crystals at High...

On the Stability of 3C-SiC Single Crystals at High Temperatures

Abstract:

The 3C-6H polytypic transition in 3C-SiC single crystals is studied by means of diffuse X-ray scattering (DXS) coupled with transmission electron microscopy (TEM). TEM reveals that the partially transformed SiC crystals contain regions of significantly transformed SiC (characterized by a high density of stacking faults) co-existing with regions of pure 3C-SiC. The simulation of the diffuse intensity allows to determine both the volume fraction of transformed material and the transformation level within these regions. It is further shown that the evolution with time and temperature of the transition implies the multiplication and glide of partial dislocations, the kinetics of which are quantified by means of DXS.

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Materials Science Forum (Volumes 717-720)

Pages:

493-496

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.493

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Online since:

May 2012

Authors:

Deborah Dompoint, Irina G. Galben-Sandulache, Alexandre Boulle, Didier Chaussende, Dominique Eyidi, Jean Luc Demenet, Marie France Beaufort, Jacques Rabier

Keywords:

3C-6H Transition, 3C-SiC, Dislocation, Stacking Fault

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References

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