XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal

Kung Yen Lee; Yan Hao Huang; Chih Fang Huang; Cheng Yueh Chung; Shun Chiu Lin; Feng Zhao

doi:10.4028/www.scientific.net/MSF.717-720.497

Paper Titles

Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals
p.481

Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC
p.485

High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals
p.489

On the Stability of 3C-SiC Single Crystals at High Temperatures
p.493

XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal
p.497

Origin of the Warpage of 3C-SiC Wafer: Effect of Nonuniform Intrinsic Stress
p.501

Raman Scattering and X-Ray Absorption from CVD Grown 3C-SiC on Si
p.505

4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering
p.509

Mechanical Properties of Cubic SiC, GaN and AlN Thin Films
p.513

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XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal

Abstract:

This paper characterizes Al, N doped and undoped 3C-SiC samples after pulsed excimer laser anneal by using X-ray diffraction (XRD) and atomic force microscopy (AFM). In order to protect surface morphology, low energy density of 0.2444 J/cm2 per shot was applied to Al and N doped samples. The results show damage recovery is corresponding to the amount of total energy applied to the surface. The peak shift of Bragg diffraction spectra of Al doped samples are almost independent of the amount of total energy. As the energy density is reduced to 0.0667 J/cm2 per shot and applied to undoped samples, the peaks of Bragg diffraction spectra of undoped samples are shifted. However, the peaks of Bragg diffraction spectra of undoped samples annealed with combination of energy densities of 0.0667 and 0.2444 J/cm2 are not shifted.