XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal

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This paper characterizes Al, N doped and undoped 3C-SiC samples after pulsed excimer laser anneal by using X-ray diffraction (XRD) and atomic force microscopy (AFM). In order to protect surface morphology, low energy density of 0.2444 J/cm2 per shot was applied to Al and N doped samples. The results show damage recovery is corresponding to the amount of total energy applied to the surface. The peak shift of Bragg diffraction spectra of Al doped samples are almost independent of the amount of total energy. As the energy density is reduced to 0.0667 J/cm2 per shot and applied to undoped samples, the peaks of Bragg diffraction spectra of undoped samples are shifted. However, the peaks of Bragg diffraction spectra of undoped samples annealed with combination of energy densities of 0.0667 and 0.2444 J/cm2 are not shifted.

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Edited by:

Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck

Pages:

497-500

Citation:

K. Y. Lee et al., "XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal", Materials Science Forum, Vols. 717-720, pp. 497-500, 2012

Online since:

May 2012

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$38.00

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