XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal
p.497
p.497
Origin of the Warpage of 3C-SiC Wafer: Effect of Nonuniform Intrinsic Stress
p.501
p.501
Raman Scattering and X-Ray Absorption from CVD Grown 3C-SiC on Si
p.505
p.505
4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering
p.509
p.509
Mechanical Properties of Cubic SiC, GaN and AlN Thin Films
p.513
p.513
Extended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device Applications
p.517
p.517
Stress Evaluation on Hetero-Epitaxial 3C-SiC Film on (100) Si Substrates
p.521
p.521
Micro-Raman Analysis of a Micromachined 3C-SiC Cantilever
p.525
p.525
Single-Crystal SiC Resonators by Photoelectrochemical Etching
p.529
p.529
Mechanical Properties of Cubic SiC, GaN and AlN Thin Films
Abstract:
Cubic polytypes of SiC, GaN and AlN were grown on silicon by molecular beam epitaxy. The mechanical properties of the epitaxial layers were investigated by nanoindentation. For 3C-SiC grown on Si(111) and Si(100) a dependence of the mechanical properties on the surface preparation with germanium prior to the carbonization was obtained.
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Periodical:
Materials Science Forum (Volumes 717-720)
Pages:
513-516
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Online since:
May 2012
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© 2012 Trans Tech Publications Ltd. All Rights Reserved
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