Single-Crystal SiC Resonators by Photoelectrochemical Etching

Mohammad M. Islam; Chih Fang Huang; Feng Zhao

doi:10.4028/www.scientific.net/MSF.717-720.529

Paper Titles

Mechanical Properties of Cubic SiC, GaN and AlN Thin Films
p.513

Extended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device Applications
p.517

Stress Evaluation on Hetero-Epitaxial 3C-SiC Film on (100) Si Substrates
p.521

Micro-Raman Analysis of a Micromachined 3C-SiC Cantilever
p.525

Single-Crystal SiC Resonators by Photoelectrochemical Etching
p.529

Amorphous Silicon Carbide (α-SiC) Thin Square Membranes for Resonant Micromechanical Devices
p.533

Amorphous Silicon Carbide as a Non-Biofouling Structural Material for Biomedical Microdevices
p.537

Seebeck Coefficient of Heavily Doped Polycrystalline 3C-SiC Deposited by LPCVD
p.541

OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients
p.545

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Single-Crystal SiC Resonators by...

Single-Crystal SiC Resonators by Photoelectrochemical Etching

Abstract:

In this paper, we report single-crystal 4H-SiC resonant structures fabricated by dopant-selective photoelectrochemical etching. The frequency response of the resonant beams was characterized by a dynamic scanning method using AFM with the beams excited by a piezoelectric actuator under atmosphere pressure and room temperature. The beam with a length of 35 μm shows mechanical resonance at 945 kHz. The Young’s modulus of single-crystal SiC was derived from the measured resonant frequency. Single-crystal 4H-SiC resonators developed in this study fully exploit the excellent electrical, mechanical, and chemical properties of SiC, while dopant-selective photoelectrochemical etching technique significantly simplifies the fabrication process.

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Silicon Carbide and Related Materials 2011

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Periodical:

Materials Science Forum (Volumes 717-720)

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529-532

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.529

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Online since:

May 2012

Authors:

Mohammad M. Islam, Chih Fang Huang, Feng Zhao

Keywords:

Photoelectrochemical Etching, Resonator, Silicon Carbide (SiC), Single Crystal

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