OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients

D.M. Nguyen; Christophe Raynaud; Mihai Lazar; Gontran Pâques; Sigo Scharnholz; Nicolas Dheilly; Dominique Tournier; Dominique Planson

doi:10.4028/www.scientific.net/MSF.717-720.545

Paper Titles

Single-Crystal SiC Resonators by Photoelectrochemical Etching
p.529

Amorphous Silicon Carbide (α-SiC) Thin Square Membranes for Resonant Micromechanical Devices
p.533

Amorphous Silicon Carbide as a Non-Biofouling Structural Material for Biomedical Microdevices
p.537

Seebeck Coefficient of Heavily Doped Polycrystalline 3C-SiC Deposited by LPCVD
p.541

OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients
p.545

Radiation Hardness of Wide-Bandgap Materials as Exemplified by SiC Nuclear Radiation Detectors
p.549

Terahertz Electroluminescence of 6H-SiC Natural SiC Superlattice in Bloch Oscillations Regime
p.553

Emission Enhancement of SiC/SiO₂ Core/Shell Nanowires Induced by the Oxide Shell
p.557

Theoretical Study of Thermoelectric Properties of SiC Nanowires
p.561

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720OBIC Measurements on Avalanche Diodes in 4H-SiC...

OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients

Abstract:

Optical Beam Induced Current (OBIC) measurements have been performed on 4H-SiC avalanche diodes with very thin and highly doped avalanche region. The light source used in this study is an Ar-laser with a wavelength of 351 nm which results in a mixed carrier injection. From these measurements, impact ionization coefficients for 4H-SiC have been extracted in the electric field range from 3 to 4.8 MV/cm. In combination with ionization coefficients in our previous paper extracted from diodes with lowly doped avalanche region, we propose a set of parameters of impact ionization coefficients for 4H-SiC, applicable to a wide electric field range.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2011

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

545-548

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.545

Citation:

Cite this paper

Online since:

May 2012

Authors:

D.M. Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, Nicolas Dheilly, Dominique Tournier, Dominique Planson

Keywords:

4H-SiC, Avalanche Diode, Breakdown Voltage, Device Simulation, Impact Ionization Coefficients, OBIC

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] A. O. Konstantinov, Q. Wahab, N. Nordel and U. Lindefelt, Appl. Phys. Lett. 71 (1997), p.90.

Google Scholar

[2] T. Hatakeyama, T. Watanabe, T. Shinohe, K. Kojima, K. Arai and N. Sano, Appl. Phys. Lett. 85 (2004), p.1380.

DOI: 10.1063/1.1784520

Google Scholar

[3] W. S. Loh, B. K. Ng, J. S. Ng, S. I. Soloviev, H-Y. Cha, P. M. Sandvik, C. M. Johnson and J. P. R. David, IEEE T. Electron Dev. 55 (2008), p.1984.

DOI: 10.1109/ted.2008.926679

Google Scholar

[4] D. M. Nguyen, G. Pâques, N. Dheilly, C. Raynaud, D. Tournier, J. P. Konrath, S. Scharnholz and D. Planson, Mater. Sci. Forum 679-680 (2011), p.567.

DOI: 10.4028/www.scientific.net/msf.679-680.567

Google Scholar

[5] M. Lazar, F. Jomard, D. M. Nguyen, C. Raynaud, G. Pâques, S. Scharnholz, D. Tournier and D. Planson, "SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements", these proceedings.

DOI: 10.4028/www.scientific.net/msf.717-720.885

Google Scholar

[6] S. G. Sdrihara, T. J. Eperjesi, R. P. Devaty and W. J. Choyke, Mater. Sci. Eng. B 61-62 (1999), p.229.

Google Scholar

[7] A. G. Chynoweth, Phys. Rev. 109 (1958), p.1537.

Google Scholar

[8] Sentaurus, TCAD simulation tool by Synopsys Inc., ver. E-2010 (2010).

Google Scholar

[9] D. M. Nguyen, C. Raynaud, N. Dheilly, M. Lazar, D. Tournier, P. Brosselard and D. Planson, Diam. Relat. Mater. 20 (2011), p.395.

DOI: 10.1016/j.diamond.2011.01.039

Google Scholar