Seebeck Coefficient of Heavily Doped Polycrystalline 3C-SiC Deposited by LPCVD
p.541
p.541
OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients
p.545
p.545
Radiation Hardness of Wide-Bandgap Materials as Exemplified by SiC Nuclear Radiation Detectors
p.549
p.549
Terahertz Electroluminescence of 6H-SiC Natural SiC Superlattice in Bloch Oscillations Regime
p.553
p.553
Emission Enhancement of SiC/SiO2 Core/Shell Nanowires Induced by the Oxide Shell
p.557
p.557
Theoretical Study of Thermoelectric Properties of SiC Nanowires
p.561
p.561
GaAs Nanowires: A New Place to Explore Polytype Physics
p.565
p.565
The Atomic Step Induced by off Angle CMP Influences the Electrical Properties of the SiC Surface
p.569
p.569
Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible
p.573
p.573
Emission Enhancement of SiC/SiO2 Core/Shell Nanowires Induced by the Oxide Shell
Abstract:
In this work we report the enhancement of the 3C-SiC band edge luminescence induced by the SiO2 shell in SiC/SiO2 core/shell nanowires (NWs) system. We demonstrate that the shell enhances the SiC near band edge luminescence and we argue the formation of a type-I quantum well between the SiC core and the SiO2 shell, with the consequent injection of carriers from the larger band-gap shell to the narrower band-gap core.
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Info:
Periodical:
Materials Science Forum (Volumes 717-720)
Pages:
557-560
Citation:
Online since:
May 2012
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© 2012 Trans Tech Publications Ltd. All Rights Reserved
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