The Atomic Step Induced by off Angle CMP Influences the Electrical Properties of the SiC Surface

Yayoi Tanaka; Takao Kanda; Kazuyuki Nagatoshi; Masamichi Yoshimura; Osamu Eryu

doi:10.4028/www.scientific.net/MSF.717-720.569

Paper Titles

Terahertz Electroluminescence of 6H-SiC Natural SiC Superlattice in Bloch Oscillations Regime
p.553

Emission Enhancement of SiC/SiO₂ Core/Shell Nanowires Induced by the Oxide Shell
p.557

Theoretical Study of Thermoelectric Properties of SiC Nanowires
p.561

GaAs Nanowires: A New Place to Explore Polytype Physics
p.565

The Atomic Step Induced by off Angle CMP Influences the Electrical Properties of the SiC Surface
p.569

Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible
p.573

Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
p.577

First-Principles Analysis of Dissociative Absorption of HF Molecule at SiC Surface Step Edge
p.581

Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material
p.585

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720The Atomic Step Induced by off Angle CMP...

The Atomic Step Induced by off Angle CMP Influences the Electrical Properties of the SiC Surface

Abstract:

In this work, we made an off-axis surface of SiC with Mechano-chemical polishing method to examine the influence that an atomic step gave for electronic properties of devices. Low energy ion scattering spectroscopy was shown Si-face and C-face with SiC structure were polished with monocrystal. We consider that there results above the atomic step on the surface influence to a device properties, especially a leakage current of Schottky diode. C atom at the step and terrace cause leakage event at metal-semiconductor interface of Schottky diode have been clarified by conductive atomic force microscopy.

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Materials Science Forum (Volumes 717-720)

Pages:

569-572

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.569

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Online since:

May 2012

Authors:

Yayoi Tanaka, Takao Kanda, Kazuyuki Nagatoshi, Masamichi Yoshimura, Osamu Eryu

Keywords:

Atomic Step, CAFM, CMP, LEISS, SBD

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