Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching

Shoji Ushio; Kohei Nakanishi; Noboru Ohtani; Tadaaki Kaneko

doi:10.4028/www.scientific.net/MSF.717-720.577

Paper Titles

Theoretical Study of Thermoelectric Properties of SiC Nanowires
p.561

GaAs Nanowires: A New Place to Explore Polytype Physics
p.565

The Atomic Step Induced by off Angle CMP Influences the Electrical Properties of the SiC Surface
p.569

Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible
p.573

Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
p.577

First-Principles Analysis of Dissociative Absorption of HF Molecule at SiC Surface Step Edge
p.581

Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material
p.585

Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC
p.589

Electronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) Surface
p.595

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Morphological Instability of 4H-SiC (0001) Basal...

Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching

Abstract:

The morphological instability appeared at step-free 4H-SiC (0001) surfaces was investigated. The step-free surfaces were fabricated at the bottom of inverted-mesa structure by the method combining a laser digging and Si-vapor etching. By repeated Si-vapor etching treatments, randomly created crater and maze structures were cyclically appeared at the step-free surfaces. These structures were distinctly classifiable by their depths from the step-free surfaces. Crater structures have 0.2 - 0.3 nm depth and maze structures have 0.5 nm depth. The morphological evolutions indicate the process of destruction of the step-free (0001) basal plane and generation of steps from step-free surfaces in the Si-vapor etching process.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2011

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

577-580

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.577

Citation:

Cite this paper

Online since:

May 2012

Authors:

Shoji Ushio, Kohei Nakanishi, Noboru Ohtani, Tadaaki Kaneko

Keywords:

4H-SiC, Dislocation, Morphological Instability, Si-Vapor Etching, Step-Free Surface

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J.A. Powell, P.G. Neudeck, A.J. Trunek, G.M. Beheim, L.G. Matus, R.W. Hoffman,Jr., J.Keys, Appl. Phys. Lett. 77 (2000) 1449.

DOI: 10.1063/1.1290717

Google Scholar

[2] J.D. Caldwell, M.A. Mastro, K.D. Hobart, O.J. Glembocki, C.R. Eddy,Jr., N.D. Bassim, R.T. Holm, R.L. Henry, M.E. Twigg, F.Kub, P.G. Neudeck, A.J. Trunek, J.A. Powell, Appl. Phys. Lett. 88 (2006) 263509.

DOI: 10.1063/1.2218045

Google Scholar

[3] S.Ushio, Y.Kutsuma, A.Yoshii, N.Tamai, N.Ohtani, T.Kaneko, Jpn. J. Appl. Phys. 50 (2011) 070104.

DOI: 10.1143/jjap.50.070104

Google Scholar