Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC

Konstantinos Zekentes; Katerina Tsagaraki; Maria Androulidaki; Maria Kayambaki; Antonis Stavrinidis; Hervé Peyre; Jean Camassel

doi:10.4028/www.scientific.net/MSF.717-720.589

Paper Titles

Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible
p.573

Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
p.577

First-Principles Analysis of Dissociative Absorption of HF Molecule at SiC Surface Step Edge
p.581

Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material
p.585

Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC
p.589

Electronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) Surface
p.595

Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth
p.601

Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation
p.605

Graphene on Carbon-Face SiС{0001} Surfaces Formed in a Disilane Environment
p.609

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Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC

Abstract:

The purpose of the present study is to determine the appropriate physical characterization methods for evaluating material quality changes during the fabrication steps of a typical 4H-SiC Static Induction Transistors (SITs). The most important fabrication step in terms of material quality is the gate implantation and post-implantation annealing. For the purposes of the initial investigation, separate “witness” samples from the processed sample have been used for evaluating implantation and post-implantation annealing. Secondary Ion Mass Spectroscopy (SIMS), optical transmission, room-temperature photoluminescence (RTPL), High Resolution X-Ray diffraction (HRXRD) and C-V measurements with Hg-probe and electrochemical (ECV) cells have been investigated in the frame of the present study. HRXRD and ECV have been proved particularly suitable for characterizing the implanted layers.