Electronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) Surface

Abstract:

We propose an atomistic model to study the interface properties of mis-oriented (turbostratic) epitaxial graphene on SiC (000-1) surface. Using calculations from first principles, we compare the energetics, and structural/electronic properties of AB and turbostratic stacking sequences within a model based on the Si adatom surface reconstruction. Our calculations show that the systems with AB and turbostratic sequences are very close in energy, demonstrating the possibility of the observation of Moire patterns in epitaxial graphene on the C-face of SiC. The two-dimensional electron gas behavior is preserved in the epitaxial turbostratic graphene systems. However, there are deviations from the ideal turbostratic epitaxial graphene.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 595-600
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.595
• Online since: May 2012
• Authors: Thushari Jayasekera, K.W. Kim, M. Buongiorno Nardelli
• Keywords: Epitaxial Graphene, Moiré Patterns, SiC C-Face, Turbostratic

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