Graphene on Carbon-Face SiС{0001} Surfaces Formed in a Disilane Environment

Abstract:

The formation of epitaxial graphene on SiC(000-1) in a disilane environment is studied. The higher graphitization temperature required, compared to formation in vacuum, results in more homogeneous thin films of graphene. Some areas of the surface display unique electron reflectivity curves not seen in vacuum-prepared samples. Using selected area diffraction, these areas are found to have a graphene/SiC interface structure with a graphene-like buffer layer [analogous to what occurs on SiC(0001) surfaces].

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 609-612
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.609
• Online since: May 2012
• Authors: Nishtha Srivastava, Guo Wei He, R.M. Feenstra
• Keywords: C-Face, Disilane, Graphen, Interface Structure, Low Energy Electron Microscopy

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