Paper Titles
Electronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) Surface
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Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth
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Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation
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Graphene on Carbon-Face SiС{0001} Surfaces Formed in a Disilane Environment
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CVD Growth of Graphene on 2’’ 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity
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The Registry of Graphene Layers Grown on SiC(000-1).

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Abstract:

Graphene samples were grown on the C-face of SiC, at high temperature in a furnace and an Ar ambient, and were investigated using LEEM, XPEEM, LEED, XPS and ARPES. Formation of fairly large grains (crystallographic domains) of graphene exhibiting sharp 1x1 patterns in m-LEED was revealed and that different grains showed different azimuthal orientations. Selective area constant initial energy photoelectron angular distribution patterns recorded showed the same results, ordered grains and no rotational disorder between adjacent layers. A grain size of up to a few mm was obtained on some samples.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

613-616

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.613

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Online since:

May 2012

Authors:

Leif I. Johansson, Somsakul Watcharinyanon, Alexei A. Zakharov, Rositza Yakimova, Chariya Virojanadara

Keywords:

ARPES, C-Face SiC, Graphen, LEEM, Ordered Grains, XPEEM, μ-LEED

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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