The Registry of Graphene Layers Grown on SiC(000-1).

Leif I. Johansson; Somsakul Watcharinyanon; Alexei A. Zakharov; Rositza Yakimova; Chariya Virojanadara

doi:10.4028/www.scientific.net/MSF.717-720.613

Paper Titles

Electronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) Surface
p.595

Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth
p.601

Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation
p.605

Graphene on Carbon-Face SiС{0001} Surfaces Formed in a Disilane Environment
p.609

The Registry of Graphene Layers Grown on SiC(000-1).
p.613

Large Area Quasi-Free Standing Monolayer Graphene on 3C-SiC(111)
p.617

CVD Growth of Graphene on 2’’ 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity
p.621

Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)
p.625

Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide
p.629

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720The Registry of Graphene Layers Grown on...

The Registry of Graphene Layers Grown on SiC(000-1).

Abstract:

Graphene samples were grown on the C-face of SiC, at high temperature in a furnace and an Ar ambient, and were investigated using LEEM, XPEEM, LEED, XPS and ARPES. Formation of fairly large grains (crystallographic domains) of graphene exhibiting sharp 1x1 patterns in m-LEED was revealed and that different grains showed different azimuthal orientations. Selective area constant initial energy photoelectron angular distribution patterns recorded showed the same results, ordered grains and no rotational disorder between adjacent layers. A grain size of up to a few mm was obtained on some samples.

You might also be interested in these eBooks

View Preview

Silicon Carbide and Related Materials 2011

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

613-616

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.613

Citation:

Cite this paper

Online since:

May 2012

Authors:

Leif I. Johansson, Somsakul Watcharinyanon, Alexei A. Zakharov, Rositza Yakimova, Chariya Virojanadara

Keywords:

ARPES, C-Face SiC, Graphen, LEEM, Ordered Grains, XPEEM, μ-LEED

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J. Hass, R. Feng, J.E. Millan-Otoya, X. Li, M. Sprinkle, P.N. First, W.A. de Heer, E.H. Conrad and C. Berger, Phys. Rev. B 75 (2007) 214109.

Google Scholar

[2] J. Hass, F. Varchon, J.E. Millan-Otoya, M. Sprinkle, N. Sharma, W.A. de Heer, C. Berger, P.N. First, L. Magaud and E.H. Conrad, Phys. Rev. Lett. 100 (2008) 125504.

Google Scholar

[3] J Hass, W.A. de Heer and J. Conrad, J. Phys.: Condens. Matter 20 (2008) 323202.

Google Scholar

[4] K.V. Emtsev, F. Speck, Th. Seyller, L. Ley and J.D. Riley, Phys. Rev. B 77 (2008) 155303.

Google Scholar

[5] M Sprinkle, D. Siegel, Y. Hu, J. Hicks, A. Tejeda, A. Taleb-Ibrahimi, P. Le Fe`vre, F. Bertran, S. Vizzini, H. Enriquez, S. Chiang, P. Soukiassian, C. Berger, W. A. de Heer, A. Lanzara, and E. H. Conrad, Phys. Rev. Lett. 103 (2009) 226803.

DOI: 10.1103/physrevlett.103.226803

Google Scholar

[6] D.L. Miller, K.D. Kubista, G.M. Rutter, M. Ruan, W.A. de Heer, P.N. First and J.A. Stroscio, Phys. Rev. B 81 (2010) 125427.

Google Scholar

[7] L. N. Srivastava, G. He, R.M. Feenstra and P.J. Fisher, Phys. Rev. B 82 (2010) 235406.

Google Scholar

[8] C Virojanadara, M. Syväjarvi, R. Yakimova, L. I. Johansson, A.A. Zakharov, and T. Balasubramanian, Phys. Rev. B 78 (2008) 245403.

Google Scholar

[9] K.V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G.L. Kellogg, L. Ley, J.L. McChesney, T. Ohta, S.A. Reshanov, J. Röhrl, E. Rotenberg, A.K. Schmid, D. Waldmann, H.B. Weber and Th. Seyller, Nature Mater. 8 (2009) 203

DOI: 10.1038/nmat2382

Google Scholar

[10] L.I. Johansson, S. Watcharinyanon, A.A. Zakharov, T. Iakimov, R. Yakimova and C. Virojanadara, Phys. Rev. B in press.

Google Scholar

[11] A.A. Zakharov, C. Virojanadara, S. Watcharinyanon, R. Yakimova and L.I. Johansson, IBM J. Res. Dev. 55(4) (2011) 6.

Google Scholar