CVD Growth of Graphene on 2’’ 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity

Marc Portail; Adrien Michon; Stephane Vézian; Denis Lefebvre; Sébastien Chenot; Abdelkarim Ouerghi; Marcin Zielinski; Thierry Chassagne; Yvon Cordier

doi:10.4028/www.scientific.net/MSF.717-720.621

Paper Titles

Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation
p.605

Graphene on Carbon-Face SiС{0001} Surfaces Formed in a Disilane Environment
p.609

The Registry of Graphene Layers Grown on SiC(000-1).
p.613

Large Area Quasi-Free Standing Monolayer Graphene on 3C-SiC(111)
p.617

CVD Growth of Graphene on 2’’ 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity
p.621

Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)
p.625

Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide
p.629

Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces
p.633

Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)
p.637

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720CVD Growth of Graphene on 2’’ 3C-SiC/Si Templates:...

CVD Growth of Graphene on 2’’ 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity

Abstract:

Structural and electrical properties of graphene elaborated on 3C-SiC(111)/Si and 3C-SiC(100)/Si templates, using propane-argon gas mixtures under CVD environment, are presented. On 3C-SiC(111), the graphitic phase is clearly attributable to graphene and presents good electrical conductivity at the macroscopic scale. The opposite case is observed on 3C-SiC(100), for which the graphitic phase develops more rapidly but with a high degree of disorientation. The graphitization, which can be coupled with 3C-SiC growth stage, is efficient over the whole surface of 2’’ wafer and allows to elaborate, in a single process, Graphene on Silicon wafers.