Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces

Biplob K. Daas; Kevin M. Daniels; S. Shetu; Tangali S. Sudarshan; M.V.S. Chandrashekhar

doi:10.4028/www.scientific.net/MSF.717-720.633

Paper Titles

Large Area Quasi-Free Standing Monolayer Graphene on 3C-SiC(111)
p.617

CVD Growth of Graphene on 2’’ 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity
p.621

Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)
p.625

Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide
p.629

Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces
p.633

Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)
p.637

Electrical Characterization of the Graphene-SiC Heterojunction
p.641

Epitaxial Single-Layer Graphene on the SiC Substrate
p.645

Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation
p.649

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Study of Epitaxial Graphene on Non-Polar 6H-SiC...

Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces

Abstract:

We present epitaxial graphene (EG) growth on non-polar a-plane and m-plane 6H-SiC faces where material characterization is compared with that known for EG grown on polar faces. AFM surface morphology exhibits nanocrystalline graphite like features for non-polar faces, while polar silicon face shows step like features. This differing behavior is attributed to the lack of a hexagonal template on the non-polar faces. Non-polar faces also exhibit greater disorder and red shift of all Raman peaks (D, G and 2D) with increasing temperature. This is attributed to decreasing stress with increasing temperature. These variations provide evidence of different EG growth mechanisms on non-polar and polar faces, likely due to differences in surface free energy. We also present differences between a-plane ( ) EG and m-plane ( ) EG in terms of morphology, thickness and Raman characteristics.